Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-17T10:59:57.562Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Oxygen Dose Variation on the Simox Microstructure

Published online by Cambridge University Press:  10 February 2011

R. Datta ,
V. Krishnamoorthy ,
L.P. Allen ,
R. Chandonnet ,
M. Farley  and
K. S. Jones
R. Datta
Affiliation:
Department of Materials Science and Engineering, University Of Florida, Gainesville, FL 32611
V. Krishnamoorthy
Affiliation:
Department of Materials Science and Engineering, University Of Florida, Gainesville, FL 32611
L.P. Allen
Affiliation:
Ibis Technology Corporation, 32 A Cherry Hill Drive, Danvers, MA 01923
R. Chandonnet
Affiliation:
Ibis Technology Corporation, 32 A Cherry Hill Drive, Danvers, MA 01923
M. Farley
Affiliation:
Ibis Technology Corporation, 32 A Cherry Hill Drive, Danvers, MA 01923
K. S. Jones
Affiliation:
Department of Materials Science and Engineering, University Of Florida, Gainesville, FL 32611
Get access

Abstract

The effect of oxygen dose variation on the SIMOX SOI structure has been investigated extensively in this work. Keeping other implantation parameters constant, the dose has been varied from 0.2x1018cm–2 to 1.4xl018cm–2. Our studies show that a critical dose exists for a particular implant energy, below which a continuous buried oxide layer does not form. Further, the SiO2 precipitates enhance the pinning of defects in the as-implanted state which subsequently grow into threading dislocations. A dose window exists, where the dislocation density is a minimum.

The oxygen depth distribution in the as-implanted and annealed state has been studied using SIMS. HRXRD measurements have been performed to reveal the strain state as a function of dose variation. The defect microstructure has been investigated using PTEM, XTEM and Secco Etching. AFM studies show the quality of the Si surface and Si/BOX (Buried OXide) interface roughness. This work gives us a fundamental understanding of the evolution of the defect microstructure and strain from the as-implanted to the annealed state using independent implantation parameter control.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 207
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Hosack, H. H., Houston, T. W., and Pollack, G. P., Solid State Technol. 12, p. 61, (1990)Google Scholar
2 Guerra, M. A., Solid State Technol. 11, p.75, (1990)Google Scholar
3 Lee, J.D., Park, J. C., Park, S.J., Roitman, P., and El-Ghor, M.K., Mater. Res. Soc. Symp. Proc. 235, p. 133,(1992)Google Scholar
4 Nakashima, S. and Izumi, K., J. Mater. Res. 7, p. 788, (1992)Google Scholar
5 Hovel, H.J., Proc. of 1996 IEEE Int. SOI Conf, p.1, (1996)Google Scholar
6 Tachimori, M., Masui, S., Nakajima, T., Kawamura, K., Hamaguchi, I., Yano, T., and Nagatake, Y., Proc. of the ECS Conf. Los Angeles, May 5 – 10, 96 – 3, p.53, (1996)Google Scholar
7 Kunii, Y., Nakashima, S., Nagase, M., and Izumi, K., Proc. of 1996 IEEE Int. SOI Conf, p.42 (1996)Google Scholar
8 Venables, D., Jones, K.S., and Namavar, F., Appl. Phys. Lett. 60, p.3147, (1992)Google Scholar
9 Venables, D., and Jones, K.S., NIMB Beam Interactions with Materials & Atoms, B74, p.65–69, (1993)Google Scholar
10 Zhou, D.S., Holland, O.W., and Budai, J.D., Appl. Phys. Lett. 63 (26), p. 3580 (1993)Google Scholar
11 Hemment, P.L.F., Reeson, K.J., Kiler, J.A., Chater, R.J., Marsh, C., Booker, G. R., Celler, G. K., and Stoemenos, J., Vacuum 36, p.877, (1986)Google Scholar
12 Allen, L.P., Datta, R., Krska, J.Y., Farley, M., Jones, K.S., Krishnamoorthy, V, Yoon, J.U., and Chung, JE., Proc. of 1996 IEEE Int. SOI Conf. p.32, (1996)Google Scholar
13 Datta, R., Allen, L.P., Dolan, R.P., Jones, K.S. and Farley, M., Proc. of the European Materials Research Society Spring Meeting Symposium, Strasbourg, France, June (1996)Google Scholar
14 Bagchi, S., Lee, J.D., Krause, S.J., and Roitman, P., Proc. of the ECS Conf. Los Angeles, May 5 –10, 96–3, p. 74 (1996)Google Scholar
15 Bagchi, S., Lee, J.D., Krause, S.J., and Roitman, P., Proc. of 1996 IEEE Int. SOI Conf., p.42, (1996)Google Scholar