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Effect of Interface and Surface on the Performance of a-Si:H TFTs

Published online by Cambridge University Press:  21 February 2011

Jin Jang
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Moon Youn Jung
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Sun Sung Yoo
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Hyon Kyun Song
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Jung Mok Jun
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
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Abstract

We have studied the effects of interface and surface on the performance of hydrogenated amorphous silicon(a-Si:H) thin film transistors. The effects of rf power, the buffer layer between the gate insulator and a-Si:H, and the surface oxidation on the performance on the a-Si:H TFTs have been investigated. By introducing suitable buffer layer, we can increase the mobility up to 2.1 cm2/Vs. The surface oxidation gives rise to the electron accumulation near the surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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