Hostname: page-component-77c89778f8-n9wrp Total loading time: 0 Render date: 2024-07-17T16:11:59.822Z Has data issue: false hasContentIssue false

The Effect of Fatigue on the Adhesion and Subcritical Debonding of Benzocyclobutene/Silicon Dioxide Interfaces

Published online by Cambridge University Press:  17 March 2011

Jeffrey M. Snodgrass
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, CA 94305-2205, USA
Reinhold H. Dauskardt
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, CA 94305-2205, USA
Get access

Abstract

The effect of fatigue loading on microelectronic thin film interfaces has until now been difficult to quantify. Most industrial fatigue testing uses HAST (Highly Accelerated Stress Testing) protocols, which inherently convolutes the effects of mechanical fatigue and the test environment. Our work focuses on isolating the deleterious effects of mechanical fatigue on interfaces, which we have found to be substantial. In this study, the integrity of a low-k polymer interface involving benzocyclobutene (BCB) and silica was examined under a variety of loading conditions. Critical (fast fracture) adhesion values were measured using standard interface fracture-mechanics geometries. Experiments were then conducted to measure the debond growth rate as a function of the applied strain energy release rate under both static and cyclic loading conditions. Our results show that even under room temperature conditions, debond growth rates measured under cyclic fatigue are considerably faster than those observed under static loading. Results are presented detailing the effects of interface chemistry (adhesion promoters), environmental moisture, and test temperature on the resistance of the interfaces to subcritical debonding. Strategies for increasing resistance of dielectric interfaces to fatigue debonding are outlined.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lane, M. W., Dauskardt, R.H., Krishna, N., Hashim, I., J. Mater. Res., in publication.Google Scholar
2. Dauskardt, R. H., Lane, M., Ma, Q., Krishna, N., Eng. Fract. Mech. 61, 141 (1998).10.1016/S0013-7944(98)00052-6Google Scholar
3. Ma, Q., Fujimoto, H., Flynn, P., Jain, V., F. Adibi-Rizi, Dauskardt, R. H., in Materials Reliability in Microelectronics V, (Mater. Res. Soc. Proc. 391, Warrendale, PA, 1995) pp. 9196.Google Scholar
4. Snodgrass, J. M., Pantelidis, D., Bravman, J. C., Dauskardt, R. H., in Low-k Materials and Applications in Microelectronics, (Mater. Res. Soc. Proc. 565, Warrendale, PA, 1999).Google Scholar
5. Ritter, J. E., Lardner, T. J., Grayeski, W., Prakash, G. C., Lawrence, J., J. Adhesion 63, 265 (1997).Google Scholar
6. Kanninen, M. F., Int. J. Fract. 9, 83 (1973).Google Scholar
7. Ma, Q., Bumgarner, J., Fujimoto, H., Lane, M. W., Dauskardt, R. H., in Materials Reliability in Microelectronics VII, (Mater. Res. Soc. Proc. 473, Warrendale, PA, 1997) pp. 314.Google Scholar
8. ASTM Standard E647-95 in “1995 ASTM Annual Book of Standards,” Vol. 3 (American Society for Testing Materials for Testing and Materials, Philadelphia, 1995).Google Scholar
9. Evans, A.G., Int. J. Fract. 9, 267 (1973).10.1007/BF00049195Google Scholar
10. Lechti, K. M., Chai, Y.-S., J. of Appl. Mech. 59, 295 (1992).10.1115/1.2899520Google Scholar