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The Effect of D-Defect in Silicon Single Crystal on Oxygen Precipitation

Published online by Cambridge University Press:  03 September 2012

I. Fusegawa ,
N. Fujimaki  and
H. Yamagishi
I. Fusegawa
Affiliation:
Isobe R&D Center Shin-Etsu Handotai Co., Ltd., Isobe 2–13–1, Annaka, Gunma 379–01, Japan
N. Fujimaki
Affiliation:
Isobe R&D Center Shin-Etsu Handotai Co., Ltd., Isobe 2–13–1, Annaka, Gunma 379–01, Japan
H. Yamagishi
Affiliation:
Isobe R&D Center Shin-Etsu Handotai Co., Ltd., Isobe 2–13–1, Annaka, Gunma 379–01, Japan
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Abstract

We investigated the effect of D-defect in CZ silicon single crystals on the oxygen precipitation by two-step thermal treatments consisting of the first annealing in nitrogen ambient at 1073K and the second annealing in dry oxygen ambient at 1273K. The density of D-defect was measured by counting ‘flow patterns’ using an optical microscope after preferential etching in Secco's solution for 30 minutes. It was found that the amount of oxygen precipitation along the growth axis was not affected by D-defect. The predominant factor of the oxygen precipitation after the two-step thermal process is the nuclei of oxygen precipitation generated around 723K during CZ crystal growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 57
Copyright
Copyright © Materials Research Society 1992

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References

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