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Dislocation Dissociation in the Σ13 Grain Boundary in Silicon

Published online by Cambridge University Press:  25 February 2011

Laurent Sagalowicz ,
Richard Beanland  and
William A. T. Clark
Laurent Sagalowicz
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, 116 West 19th Avenue, Columbus OH 43210, USA
Richard Beanland
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, 116 West 19th Avenue, Columbus OH 43210, USA
William A. T. Clark
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, 116 West 19th Avenue, Columbus OH 43210, USA
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Abstract

Transmission electron microscopy has been used to study the atomic and dislocation structure of deformed and undeformed Σ13 {510} boundary in Si. It is shown that there are several alternative structures for this boundary, which may be separated by imperfect and partial grain boundary dislocations. It is also shown that the dissociation of crystal lattice dislocations which interact with the boundary during deformation results is far more complicated than simple geometrical models applicable in monatomic materials predicts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 151
Copyright
Copyright © Materials Research Society 1992

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References

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