Hostname: page-component-84b7d79bbc-tsvsl Total loading time: 0 Render date: 2024-07-27T12:30:32.371Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct Measurement of Impurity Segregation Concentration at Grain Boundaries for Polycrystalline Materials using EBSD and 3D Reconstruction of SEM images of Etch Grooves

Published online by Cambridge University Press:  15 March 2011

Marilyne Cornen  and
René Le Gall
Marilyne Cornen
Affiliation:
Polytech'Nantes, Laboratoire Génie des Matériaux et Procédés Associés Rue Christian Pauc, BP 50609, 44306 Nantes Cedex 03, France
René Le Gall
Affiliation:
Polytech'Nantes, Laboratoire Génie des Matériaux et Procédés Associés Rue Christian Pauc, BP 50609, 44306 Nantes Cedex 03, France
Get access

Abstract

Impurity segregation at grain boundaries in polycrystalline alloys is known to have a tremendous impact on the material properties such as mobility, cohesion.. But, direct measurement of grain boundary chemistry is quite complex and there are quite few results concerning polycrystals. In this paper we present an indirect method to measure segregation- misorientation dependence on polycrystalline Ni-S alloys using both EBSD and 3D reconstruction of etch grooves. Samples of Ni-S alloy (7.2 ppm at) have been annealed at different temperatures to get equilibrium segregation at grain boundaries. Then they have been etched near the transpassive potential to form etch grooves, whose geometry depends on the sulfur segregation level. Grain boundaries misorientation statistics and first results about the segregation-misorientation function are given here.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 819: Symposia N/P – Interfacial Engineering for Optimized Properties III , 2004 , N3.3
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lejček, P., Hofmann, S. and Paidar, V., Acta Mat. 51, 3951–3963 (2003).Google Scholar
2. Vladimirov, A.B., Kaigorodov, V.N., Klotsman, S.M.; Trakhtenberg, I.Sh., Fiz. Metall. i Metall., 39, 319–323, (1975).Google Scholar
3. Gall, R. Le, Querard, E., Saindrenan, G., Mourton, H. and Roptin, D. Scripta Mat. 35, 1175–1181 (1996).Google Scholar
4. Beaunier, L., Froment, M. and Vignaud, C., Electrochem. Acta 25, 1239–1246 (1980).Google Scholar
5. Mackenzie, J.K. and Thomson, M.J., Biometrika, 44, 205 (1957).Google Scholar
6. Liebman, B., Lucke, K., and Masing, G., Z Metallk. 47, 57 (1956).Google Scholar
7. Humphreys, F.J. and Hatherly, M, in Recrystallization and related annealing phenomena, Pergamon, Oxford (1995).Google Scholar