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The Diffusion of Phosphorus and Indium into Gallium Arsenide from Polycrystalline-Silicon

Published online by Cambridge University Press:  26 February 2011

K. L. Kavanagh ,
C. W. Magee  and
J. W. Mayer
K. L. Kavanagh
Affiliation:
Dept. of Materials Science, Cornell University, Ithaca, NY 14853
C. W. Magee
Affiliation:
RCA, David Sarnoff Research Center, Princeton, NJ 08540
J. W. Mayer
Affiliation:
Dept. of Materials Science, Cornell University, Ithaca, NY 14853
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Abstract

Arsenic or phosphorus doped polycrystalline-Si (poly-Si) acts as a diffusion source when deposited on GaAs. Non-Fickian Si diffusion into GaAs has been observed following heat treatments above 700°C. In this paper, the diffusion of In and P from poly-Si at temperatures between 800 and 1020°C is presented. These impurities, introduced into the poly-Si by in-situ plasma deposition, implantation or vapor annealing, diffuse rapidly into the GaAs. Results from particle induced x-ray analysis, transmission electron microscopy, Rutherford backseat tering and secondary ion mass spectroscopy indicate 80% substitutional In and P at interface concentrations of approximately 10 and 25 at%, respectively.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 785
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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