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Diffusion of Implanted Dopants and Isolation Species in III-V Nitrides

Published online by Cambridge University Press:  21 February 2011

S.J. Pearton
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
C.B. Vartuli
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
R.G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu CA 90265
J.M. Zavada
Affiliation:
US Army Research Office, Research Triangle Park, NC 27709
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Abstract

Twelve different elements used for doping or isolation were implanted into GaN, (and selected species into A1N and InN), and the resulting range parameters were measured by Secondary Ion Mass Spectrometry. For lighter elements such as Be, F and H the agreement between experimental range and range straggle dtermined using a Pearson IV computer fitting routine and those predicted by TRIM 92 calculations was good, but for heavier elements such as Ge and Se the discrepancy can be as much as a factor of two in range. There was little redistribution of any of the investigated species up to 700 °C, except for 2H in A1N and S in GaN. Elements such as F and Be which are generally rapid difiusers in III-V compounds do not display any redistribution in GaN for temperatures up to 800 °C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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