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Diffusion Length Measurements of Minority Carriers in Si-SiO2 Using the Photo-Grating Technique

Published online by Cambridge University Press:  17 March 2011

Y. Posada ,
I. Balberg ,
L.F. Fonseca ,
O. Resto  and
S.Z. Weisz
Y. Posada
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, 00931 PR
I. Balberg
Affiliation:
The Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
L.F. Fonseca
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, 00931 PR
O. Resto
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, 00931 PR
S.Z. Weisz
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, 00931 PR
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Abstract

We have studied the microstructure, the transport and the phototransport properties of the Si crystallites network in Si-SiO2 composites. We have found that in our co-sputtered samples the average crystallite diameter, d, decreases from 40 to 5 nm as the content of the silicon, x, decreases from 80 to 40 volume%, and that the percolation of the network sets is at x ≈ 40 vol%. A simultaneous study of the photoluminescence (PL) shows the, quantum confinement, expected red shift of its peak with increasing d. On the other hand the very strong observed decrease of the PL intensity with x is interpreted here as due to a deconfinement effect that is dominated by the increase in the cluster size of connected Si crystallites. The results suggest that a closed random packing of the Si crystallites will be the preferred network for high intensity electroluminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F14.44.1
Copyright
Copyright © Materials Research Society 2001

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