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Dielectric Properties of Semiconductors by TDDFT in Real-Space and Real-Time Approach

Published online by Cambridge University Press:  26 February 2011

Yasunari Zempo  and
Nobuhiko Akino
Yasunari Zempo
Affiliation:
Tsukuba Research Laboratory Sumitomo Chemical Co., Ltd. 6 Kitahara, Tsukuba, 300–3294, JAPAN
Nobuhiko Akino
Affiliation:
Tsukuba Research Laboratory Sumitomo Chemical Co., Ltd. 6 Kitahara, Tsukuba, 300–3294, JAPAN
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Abstract

The dielectric responses of semiconductors such as C, Ge, Si, and AlGaAs are studied by the time-dependent density-functional theory. In our study, the real-space grid representation of the electron wave functions is used and the real-time approach is employed for the dynamics of the system. Both the static and dynamic dielectric functions are calculated, and we yielded that the static dielectric constants ε(0) are especially in good agreement with the experimental values. The effect of Al-component in the compound semiconductor AlxGa1−xAs is also studied. The peaks of the imaginary part of the dielectric function change with the band separation as a function of the Al-component. Furthermore, the static dielectric constants show the expected change due to the band separation as a function of the Al-component.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B9.33
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Yabana, K. and Bertsch, G. F., Phys. Rev. B54, 4484 (1996)Google Scholar
2. Chelikowsky, J., Troullier, N., Wu, K., and Saad, Y., Phys. Rev. 50, 11355 (1994)Google Scholar
3. Troullier, N. and Martins, J. L., Phys. Rev. B43, 1993 (1991)Google Scholar
4. Kleinman, L. and Bylander, D., Phys. Rev. Lett. 48, 1425 (1982)Google Scholar
5. Perdew, J. and Zunger, A., Phys. Rev. B23, 5048 (1981)Google Scholar
6. Aspnes, D. E. and Studna, A. A., Phys. Rev. B27, 985 (1983)Google Scholar
7. Madelung, Otfried (Ed.), ‘Semiconductors-Basic Data 2nd revised edition’, Springer 1996 Google Scholar