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Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM

Published online by Cambridge University Press:  04 February 2013

Laura Lazzarini
Affiliation:
CNR-IMEM, Parco area delle Scienze 37/A, 43124 Parma, Italy.
Enzo Rotunno
Affiliation:
CNR-IMEM, Parco area delle Scienze 37/A, 43124 Parma, Italy.
Vincenzo Grillo
Affiliation:
CNR-IMEM, Parco area delle Scienze 37/A, 43124 Parma, Italy. CNR-Center S3 Nano, via Campi 213/A, 41125 Modena, Italy.
Massimo Longo
Affiliation:
CNR-IMM, MDM Lab, via C. Olivetti 2, 20864 Agrate Brianza, Italy.
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Abstract

The reduction of the active cell size to the nanoscale is crucial for the improvement of the phase change memory devices (PCM) based on Ge-Sb-Te (GST) alloys. The self-assembly of Au catalyzed Ge1Sb2Te4 (GST-124) nanowires (NWs) has been achieved by metal organic chemical vapor deposition. The atomic arrangement of the NWs has been investigated and the stacking sequence has been identified, by combining the direct observation by High Angle Annular Dark Field (HAADF) imaging and simulations. It has been assessed that Ge and Sb atoms can randomly occupy the same sites in the crystal lattice, despite the adverse predictions of the theoretical models elaborated for the bulk material.

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Copyright
Copyright © Materials Research Society 2013

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Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM
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