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Detection of Misfit Strain Relaxation in MBE Grown Si1-xGex Films by Dynamic Monitoring of Rheed Diffraction Features

Published online by Cambridge University Press:  25 February 2011

J.W. Maes
Affiliation:
Delft Institute of Microelectronics and Submicron Technology (DIMES)Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
O.F.Z. Schannen
Affiliation:
Delft Institute of Microelectronics and Submicron Technology (DIMES)Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
J. Trommel
Affiliation:
Delft Institute of Microelectronics and Submicron Technology (DIMES)Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
K. Werner
Affiliation:
Delft Institute of Microelectronics and Submicron Technology (DIMES)Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
S. Radelaar
Affiliation:
Delft Institute of Microelectronics and Submicron Technology (DIMES)Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
P. Balk
Affiliation:
Delft Institute of Microelectronics and Submicron Technology (DIMES)Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
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Abstract

Reflection high energy electron diffraction (RHEED) has been used to detect strain relaxation in SiGe during growth on <001>- oriented Si for various layer compositions and substrate temperatures. The RHEED-technique permits the dynamic monitoring of the in-plane lattice constant of the growing layer by measuring the distance between diffraction features. The actual RHEED pattern is recorded by a CCD camera and subsequently processed in real time by a computer. This way, the layer relaxation can be followed conveniently; a detection limit for a variation in the lattice constant of Δa/a=5.10−4 has been obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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Detection of Misfit Strain Relaxation in MBE Grown Si1-xGex Films by Dynamic Monitoring of Rheed Diffraction Features
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Detection of Misfit Strain Relaxation in MBE Grown Si1-xGex Films by Dynamic Monitoring of Rheed Diffraction Features
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Detection of Misfit Strain Relaxation in MBE Grown Si1-xGex Films by Dynamic Monitoring of Rheed Diffraction Features
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