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Design and Optimization of GaN-based Semiconductor Saturable Absorber Mirror Operating at Around 415 nm

Published online by Cambridge University Press:  01 February 2011

Fen Lin
Affiliation:
g0402568@nus.edu.sg, National University of Singapore, Dept of Electrical and Computer Engineering, 4 Engineering Drive 3, Singapore, 117576, Singapore
Ning Xiang
Affiliation:
elexn@nus.edu.sg, National University of Singapore, Dept of Electrical and Computer Engineering, 4 Engineering Drive 3, Singapore, 117576, Singapore
Xin Cai Wang
Affiliation:
xcwang@SIMTech.a-star.edu.sg, Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore, 638075, Singapore
Jesudoss Arokiaraj
Affiliation:
j-arokiaraj@imre.a-star.edu.sg, Institute of Materials Research and Engineering, 3 Reseacrh Link, Singapore, 117602, Singapore
Wei Liu
Affiliation:
liuw@imre.a-star.edu.sg, Institute of Materials Research and Engineering, 3 Reseacrh Link, Singapore, 117602, Singapore
Hong Fei Liu
Affiliation:
elelhf@nus.edu.sg, National University of Singapore, Dept of Electrical and Computer Engineering, 4 Engineering Drive 3, Singapore, 117576, Singapore
Soo Jin Chua
Affiliation:
elecsj@nus.edu.sg, National University of Singapore, Dept of Electrical and Computer Engineering, 4 Engineering Drive 3, Singapore, 117576, Singapore
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Abstract

A broadband GaN-based semiconductor saturable absorber mirror (SESAM) with a dielectric SiO2/Si3N4 distributed Bragg reflector (DBR) operating at wavelength around 415 nm was fabricated. Serious oscillation fringes due to the light interference were observed in the SESAM's reflectance spectrum. Such oscillation in reflectivity can impede the function of the saturable absorber. Simulations showed that by removing the sapphire substrate and thinning the GaN buffer layer, oscillation fringes could be significantly reduced. Experiments were carried out and the results agreed well with the simulation prediction.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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