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Deposition of II/VI thin films from Novel Single-Source Precursors

Published online by Cambridge University Press:  11 February 2011

Mohammad Afzaal ,
Mohammad Azad Malik ,
Paul O'Brien  and
Jin-Ho Park
Mohammad Afzaal
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: jin-ho.park@man.ac.uk; paul.obrien@man.ac.uk
Mohammad Azad Malik
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: jin-ho.park@man.ac.uk; paul.obrien@man.ac.uk
Paul O'Brien
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: jin-ho.park@man.ac.uk; paul.obrien@man.ac.uk
Jin-Ho Park
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: jin-ho.park@man.ac.uk; paul.obrien@man.ac.uk
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Abstract

The compound [MeCd(SePiPr2)2N]2 is used as a single-source precursor to cadmium selenide films in a low-pressure chemical vapour deposition process. Thermogravimetric analysis (TGA) shows that the precursor is reasonably volatile, making it suitable for the deposition of thin films. As-deposited films were identified as CdSe confirmed by X-ray powder diffraction (XRPD) and their morphologies were studied by scanning electron microscope (SEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.21
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Chung, G. Y., Kim, H.-D., Ahn, B.-T. and Im, H.-B., Thin Solid Films. 232, 28 (1993).Google Scholar
[2] Yoshikawa, A., Yamaga, S., Tanaka, K. and Kasai, H., J. Cryst. Growth. 72, 13 (1985).Google Scholar
[3] Frigo, D. M., Khan, O. F. Z. and O'Brien, P., J. Cryst. Growth. 96, 989 (1989).Google Scholar
[4] Hursthouse, M. B., Malik, M. A., Motevalli, M. and O'Brien, P., Polyhedron. 11, 45 (1992).Google Scholar
[5] Evans, M. A. H. and Williams, J. O., Thin Solid Films. 87, L1 (1982).Google Scholar
[6] Osaka, K. and Yamamoto, T., Inorg. Chem. 30, 2328 (1991).Google Scholar
[7] Bochmann, M., Webb, K. J., Harman, M. and Hursthouse, M. B., Angew. Chem, Int. Ed. Engl. 638, 29 (1990).Google Scholar
[8] Dabbousi, B. O., Bonasia, P. J. and Arnold, J., J. Am. Chem. Soc. 113, 3186 (1991).Google Scholar
[9] Malik, M. A. and O'Brien, P., Mater. Chem. 3, 999 (1991).Google Scholar
[10] Malik, M. A., Motevalli, M., O'Brien, P. and Walsh, J. R., Organometallics. 11, 3436 (1992).Google Scholar
[11] Afzaal, M., Crouch, D., O'Brien, P. and Park, J.-H., Mat. Res. Soc. Symp. Proc. 730, V3.5.1 (2002).Google Scholar
[12] Cupertino, D., Birdsall, D. J., Slwain, A. M. Z. and Woollins, J. D., Inorg. Chim. Acta. 290, 1 (1999).Google Scholar
[13] Malik, M. A. and O'Brien, P., Adv. Mater. Opt. Electron. 3, 171 (1994).Google Scholar
[14] Weller, R. G. and Dimmock, J. O., Phy. Rev. 125, 1805 (1962).Google Scholar