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Dependence of the MoSe2 Formation on the Mo Orientation and the Na Concentration for Cu(In,Ga)Se2 Thin-Film Solar Cells

Published online by Cambridge University Press:  01 February 2011

Daniel Abou-Ras ,
Debashis Mukherji ,
Gernot Kostorz ,
David Brémaud ,
Marc Kälin ,
Dominik Rudmann ,
Max Döbeli  and
Ayodhya N. Tiwari
Daniel Abou-Ras
Affiliation:
ETH Zürich, Institute of Applied Physics, 8093 Zürich, Switzerland ETH Zürich, Thin Film Physics Group, Laboratory for Solid State Physics, Technoparkstrasse 1, 8005 Zürich, Switzerland
Debashis Mukherji
Affiliation:
ETH Zürich, Institute of Applied Physics, 8093 Zürich, Switzerland
Gernot Kostorz
Affiliation:
ETH Zürich, Institute of Applied Physics, 8093 Zürich, Switzerland
David Brémaud
Affiliation:
ETH Zürich, Thin Film Physics Group, Laboratory for Solid State Physics, Technoparkstrasse 1, 8005 Zürich, Switzerland
Marc Kälin
Affiliation:
ETH Zürich, Thin Film Physics Group, Laboratory for Solid State Physics, Technoparkstrasse 1, 8005 Zürich, Switzerland
Dominik Rudmann
Affiliation:
ETH Zürich, Thin Film Physics Group, Laboratory for Solid State Physics, Technoparkstrasse 1, 8005 Zürich, Switzerland
Max Döbeli
Affiliation:
Paul Scherrer Institute, c/o ETH Zürich, Institute for Particle Physics, 8093 Zürich, Switzerland
Ayodhya N. Tiwari
Affiliation:
ETH Zürich, Thin Film Physics Group, Laboratory for Solid State Physics, Technoparkstrasse 1, 8005 Zürich, Switzerland Centre for Renewable Energy Systems and Technology, Department of Electronic and Electrical Engineering, Loughborough University, Loughborough, Leicestershire, LE11 3TU, UK
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Abstract

The formation of MoSe2 has been studied on polycrystalline Mo layers and on Mo single crystals in dependence of the Mo orientation, the Na concentration, and also as a function of the Se source and the substrate temperatures. The Mo substrates were selenized by evaporation of Se. The samples were analyzed by means of X-ray diffraction, Rutherford backscattering spectrometry, elastic recoil detection analysis, and by conventional and high-resolution transmission electron microscopy. It was found that the crystal structure and orientation of the MoSe2 layer change with increasing substrate temperature. However, the texture of MoSe2 does not depend on the orientation of the Mo substrate. It was also found that the MoSe2 growth is significantly influenced by the Na concentration at substrate temperatures of 450°C and 580°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F8.1
Copyright
Copyright © Materials Research Society 2005

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