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Defects and Surfactant Action of Antimony on GaAs and GaAs1-xNx on GaAs [100] by Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

W. K. Cheah ,
W. J. Fan ,
S. F. Yoon ,
S. Wicaksono ,
R. Liu  and
A. T. S. Wee
W. K. Cheah
Affiliation:
Nanyang Technological University, School of Electrical and Electronic Engineering, Block S1, Nanyang Avenue, Singapore 639798, Republic of Singapore
W. J. Fan
Affiliation:
Nanyang Technological University, School of Electrical and Electronic Engineering, Block S1, Nanyang Avenue, Singapore 639798, Republic of Singapore
S. F. Yoon
Affiliation:
Nanyang Technological University, School of Electrical and Electronic Engineering, Block S1, Nanyang Avenue, Singapore 639798, Republic of Singapore
S. Wicaksono
Affiliation:
Nanyang Technological University, School of Electrical and Electronic Engineering, Block S1, Nanyang Avenue, Singapore 639798, Republic of Singapore
R. Liu
Affiliation:
Department of Physics, National University of Singapore, 2 Science Drive 3 Road, Singapore 117542, Republic of Singapore
A. T. S. Wee
Affiliation:
Department of Physics, National University of Singapore, 2 Science Drive 3 Road, Singapore 117542, Republic of Singapore
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Abstract

Low temperature (4.5K) photoluminescence (PL) measurements of GaAs(N):Sb on GaAs grown by solid source molecular beam epitaxy (MBE) show a Sb-related defect peak at ∼1017nm (1.22eV). The magnitude of the Sb-related impurity PL peak corresponds in intensity with the prominence of the additional two-dimensional [115] high-resolution x-ray diffraction (HRXRD) defect peaks. The elimination of these defects can be a measure of the improvement in crystal quality of GaAsN:Sb and a Sb flux ≥ 1.3×10−8 Torr is needed to invoke the surfactant behavior in III-V dilute nitride MBE growth for a growth rate of 1μm/hr.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z5.26
Copyright
Copyright © Materials Research Society 2004

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References

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