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Defect Reaction and Electrical Properties of Iron in N-Type Silicon

Published online by Cambridge University Press:  26 February 2011

Hajime Kitagawa  and
Shuji Tanaka
Hajime Kitagawa
Affiliation:
Department of Electronic Materials Engineering, Fukuoka Institute of Technology, Wajiro-Higashi, Higashi-ku, Fukuoka 811-02, Japan
Shuji Tanaka
Affiliation:
Department of Electronic Materials Engineering, Fukuoka Institute of Technology, Wajiro-Higashi, Higashi-ku, Fukuoka 811-02, Japan
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Abstract

Since the first report by our group in 1992, iron-related defects in n-type silicon has been found to exhibit unusual in-diffusion and annealing properties. We review in this paper the recent progress in understanding the electrical and diffusion properties of iron-related defects in n-type silicon. We have shown from DLTS and Hall effect that iron in n-type silicon is electrically ionized and introduce one donor level at Ec-0.41 eV (level C) and, at least, one acceptor level at Ec-0.21 eV (level B). The donor character of former level has been confirmed by a Poole-Frenkel effect. The concentrations of two centers introduced are in the order of 1013 cm−3 at maxima. In-diffusion behavior of levels B and C show that these levels are intermediate states in a consecutive reaction of iron-related complex formation. Low-temperature isothermal annealing experiments from the room temperature to 200°C suggest that iron-related donor is formed, in part, by the electrostatic attractive force between two point charges.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 983
Copyright
Copyright © Materials Research Society 1995

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