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Defect Microstructure of Thin Wurtzite GaN Films Grown by MBE

Published online by Cambridge University Press:  21 February 2011

B.N. Sverdlov ,
A. Botchkarev ,
G.A. Martin ,
A. Salvador ,
H. MorkoÇ ,
S.-C.Y. Tsen  and
David J. Smith
B.N. Sverdlov
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois, 104 S. Goodwin Ave., Urbana, IL 61801
A. Botchkarev
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois, 104 S. Goodwin Ave., Urbana, IL 61801
G.A. Martin
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois, 104 S. Goodwin Ave., Urbana, IL 61801
A. Salvador
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois, 104 S. Goodwin Ave., Urbana, IL 61801
H. MorkoÇ
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois, 104 S. Goodwin Ave., Urbana, IL 61801
S.-C.Y. Tsen
Affiliation:
Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, Tempe, AZ 85287
David J. Smith
Affiliation:
Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, Tempe, AZ 85287
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Abstract

Thin films of wurtzite GaN have been grown by molecular beam epitaxy on 6H SiC (basal plane), Si {111} and sapphire (c-plane) substrates with and without various buffer layers. The defect microstructure of the films and the substrate/buffer/GaN interfacial quality have been characterized by cross-sectional transmission electron microscopy. The morphology was dominated by threading defects that originated at the substrate/buffer and/or buffer/film interfaces. Typical defect densities dropped rapidly with distance from the substrate but remained ∼108–109/cm2, depending on the particular substrate, for film thicknesses approaching one micron or more. The best quality films were grown at 770°C on sapphire with A1N buffer layers, and had X-ray rocking curve full-width at half-maximum values of ∼ 55arc-sec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 175
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Morkoc, H., Strite, S., Gao, G.B., Lin, M.E., Sverdlov, B. and Burns, M., J. Appl. Phys. 76, 1363 (1994).Google Scholar
2 Davis, R.F., Proc. IEEE 79, 702 (1991).Google Scholar
3 Lilienthal-Weber, Z., Sohn, H., Newman, N. and Washburn, J., J. Vac. Sci. Tech. B13, 1578 (1995).Google Scholar
4 Smith, D.J., Chandrasekhar, D., Sverdlov, B., Botchkarev, A., Salvador, A. and Morkoç, H. Appl. Phys. Lett. 67, 1830 (1995).Google Scholar
5 Fertitta, K.G., Holmes, A.L., Neff, J.G., Ciuba, F.J. and Dupuis, R.D., Appl. Phys. Lett. 65, 1823 (1994).Google Scholar
6 Ponce, F.A., Kruser, B.S., Major, J.S., Plano, W.E. and Welch, D.F., Appl. Phys. Lett. 67, 410(1995).Google Scholar
7 Kapolnek, D., Wu, X.H., Heying, B., Keller, S., Keller, B.P., Mishra, U.K., DenBaars, S.P. and Speck, J.S., Appl. Phys. Lett. 67, 1541 (1995).Google Scholar
8 Strite, S., Ruan, J., Li, Z.G., Manning, N., Salvador, A., Chen, H., Smith, D.J., Choyke, W.J., and Morkoç, H., J. Crystal Growth, 127, 204 (1994)Google Scholar
9 Martin, G.A., Sverdlov, B., Botchkarev, A., Morkoç, H., Smith, D.J., Tsen, S.-C. Y., Thompson, W.H. and Nayfeh, M.H., these proceedings.Google Scholar
10 Zhu, Q., Botchkarev, A., Kim, W., Aktas, O., Sverdlov, B., Morkoç, H., Tsen, S.-C. Y. and Smith, D.J., Appl. Phys. Lett, submitted, Nov. 1995.Google Scholar
11 Sverdlov, B.N., Martin, G.A., Morkoç, H. and Smith, D.J., Appl. Phys. Lett. 67, 2063 (1995).Google Scholar