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Defect Characterization Of InAs Wafers Using Positron Lifetime Spectroscopy

Published online by Cambridge University Press:  15 February 2011

J. Mahony  and
P. Mascher
J. Mahony
Affiliation:
Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4L7
P. Mascher
Affiliation:
Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4L7
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Abstract

Positron lifetime measurements on InAs wafers have shown that the positron bulk lifetime in InAs is 246±2 ps. Most samples exhibit a defect lifetime of 287±6 ps, which is attributable to monovacancy-impurity complexes with a concentration of 7±2×10 16 cm-3. Very heavily doped n-type samples exhibit a defect lifetime of 332–340 ps, characteristic of divacancies. The concentration of these defects is also close to 1017 cm−3. Both types of defects are stable for rapid thermal annealing up to 850 °C, and both defects are neutral. The formation of the divacancytype defects may be correlated with a discrepancy between the carrier concentration and the total

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 547
Copyright
Copyright © Materials Research Society 1997

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