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CW Laser-Induced Removal of Interconnections in Submicron Devices
Published online by Cambridge University Press: 25 February 2011
Abstract
The interaction of a cw argon-ion laser with the materials used in the microelectronics technology is described as a pyrolytic effect. A chemical reaction is induced between the oxide layer and the hot irradiated silicon or aluminum line. By making a cross section of the irradiated area using a focused ion beam, the formation of an unstable insulating material covering the conducting material is observed.
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- Copyright © Materials Research Society 1993