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CVD Growth of Graphene on Three Types of Epitaxial Metal Films on Sapphire Substrate

Published online by Cambridge University Press:  23 March 2011

Katsuya Nozawa ,
Nozomu Matsukawa ,
Kenji Toyoda  and
Shigeo Yoshii
Katsuya Nozawa
Affiliation:
Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai, Seika, Kyoto 619-0237, Japan
Nozomu Matsukawa
Affiliation:
Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai, Seika, Kyoto 619-0237, Japan
Kenji Toyoda
Affiliation:
Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai, Seika, Kyoto 619-0237, Japan
Shigeo Yoshii
Affiliation:
Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai, Seika, Kyoto 619-0237, Japan
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Abstract

Graphene growth by chemical vapor deposition (CVD) was studied on three types of epitaxial metal films with different crystal structures on sapphire. Nickel (face-centered-cubic: fcc), Ru (hexagonal-closed-pack: hcp), and Co (fcc at temperature for graphene growth and hcp at R.T.) were deposited on c-face sapphire substrates and annealed in a furnace for solid phase epitaxial growth. Graphene layers were grown by CVD with methane gas on the epitaxial metal film. The graphene layer uniformity was consistent with the structural simplicity of the metal film. The Ru sample had a single domain in the metal film and the highest graphene uniformity. The Co sample had a very complex crystal structure in the metal film and the poorest uniformity in graphene. The Ni sample had two types of stacking domains in the metal film and the graphene layer was uniform on each domain, but inhomogeneity was observed at domain boundaries.

Keywords

epitaxygrain boundariesmetal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1284: Symposium C – Fundamentals of Low-Dimensional Carbon Nanomaterials , 2011 , mrsf10-1284-c01-11
Copyright
Copyright © Materials Research Society 2011

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