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Cu Deposition from HF Solutions and Effects on Regrowth of Si Native Oxide

Published online by Cambridge University Press:  21 February 2011

Satish Bedge ,
Bradford S. Barron  and
H. Henry Lamb
Satish Bedge
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905
Bradford S. Barron
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905
H. Henry Lamb
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905
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Abstract

Cu was deposited onto Si(100) wafers from 1% HF solutions containing CuCl2. Cu K edge glancing-angle x-ray fluorescence (GAXF) measurements were used to determine surface concentrations and to elucidate the chemical state and morphology of the deposits. Total reflection x-ray fluorescence (TXRF) measurements were used to calibrate edge jumps to absolute surface concentrations. X-ray absorption near-edge structure (XANES) spectra indicated that the Cu deposits were metallic at concentrations of 1014 - 1016 atoms cm−2, and extended x-ray absorption fine structure (EXAFS) spectra evidenced that the Cu was present as three-dimensional fcc crystallites. Cu0 deposition from HF solutions is inferred to proceed by an electroless process, that is made more favorable by complexation of Si4+ by F. Contaminated wafers were stored in air and the effects of Cu on regrowth of Si native oxide were investigated using Auger electron spectroscopy (AES). The induction period for native oxide regrowth on unrinsed wafers markedly decreased when Cu microcontamination was present, consistent with a catalytic effect. Rinsed wafers had higher initial oxide coverages but were oxidized more slowly in air than unrinsed wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 467
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1)Kern, W., J. Electrochem. Soc. 137 (6), 1887–1892 (1990)Google Scholar
2)Penka, V., Hub, W., Spectrochim. Acta. 44B (5), 481–490 (1989)Google Scholar
3)Stohr, J., in X-ray absorption: Principles, Applications, Techniques of EXAFS, SEXAFS and XANES edited by Koningsberger, D. C. and Prins, R. (Wiley Interscience, New York 1988) p. 443 Google Scholar
4)Graf, D., Grundner, M., Muhloff, L., Dellith, M., J. Appl. Phys. 69 (11), 7620–7626 (1991)Google Scholar
5)Bedge, S., McFadyen, J. and Lamb, H. H. in Chemical Surface Preparation, Passivation and Cleaning for Semiconductor growth and processing edited by Nemanich, R., Helms, C. R., Hirose, M. and Rubloff, G. W. (Mater. Res. Soc. Proc. 259, Pittsburgh, PA 1991) pp. 207–212 Google Scholar
6)Sayers, D. E., Bunker, B. A., in X-ray absorption: Principles, Applications Techniques of EXAFS, SEXAFS and XANES edited by Koningsberger, D. C. and Prins, R. (Wiley Interscience, New York 1988) p. 211 Google Scholar
7)Tan, Z., Budnick, J., Heald, S., Rev. Sci. Instrum. 60 (6), 1021–1025 (1989)Google Scholar