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Cu CMP Edge Uniformity Improvement Studies for 32 nm Technology Node and Beyond
Published online by Cambridge University Press: 01 February 2011
Abstract
Studies of the wafer edge uniformity step by step, from hard mask deposition, reactive ion etch, electroplating to post Cu CMP had been done using scanning electron microscopy (SEM) measurements, showed that the major wafer non-uniformity comes from the Cu CMP step. Improvement of Cu CMP edge uniformity had been achieved through engineering of platen 1 using real time profile control as well as CMP head zone pressure adjustment and platen 3 slurry optimizations
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- Copyright © Materials Research Society 2010
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