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Cross-sectional phase analysis of single crystalline silicon indented by Rockwell indenter

Published online by Cambridge University Press:  17 March 2011

Sung-Soon Kim
Affiliation:
Department of Ceramic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemoon-Gu, Seoul, 120-749, Korea
Han-Seog Oh
Affiliation:
Department of Ceramic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemoon-Gu, Seoul, 120-749, Korea
Seong-Min Jeong
Affiliation:
Department of Ceramic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemoon-Gu, Seoul, 120-749, Korea
Hong-Lim Lee
Affiliation:
Department of Ceramic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemoon-Gu, Seoul, 120-749, Korea
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Abstract

This study of the indentation behavior of Si has revealed a complex process of mechanical deformation. As loading time increased, Si-XII and Si-III disappeared and only a-Si appeared in (111) samples. As loading time increased, crack was generated and residual stress was removed. At fast loading rate, the deformation behavior appears predominantly elastic. On the contrary, at slow loading rate, catastrophic plastic deformation occurred during loading stage.

We have observed crack behavior which occurred under spherical indentation in crystalline silicon. Method which was used in our research for cross-sectional observation exaggerated generation and propagation of cracks. Our method prepares to observe crack behavior. But it is not profit to observe to phase transformation

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

1. Wu, Y.Q., Shi, G.Y. and Xu, Y.B., Cross-sectional observation on indentation of [001] silicon, J. Mater. Res., 1999, 14(6), 23992401.Google Scholar
2. Hull, Robert, Properties of Crystalline Silicon (The Institution of Electrical Engineers, London, U. K. 1999).Google Scholar
3. Gogotsi, Y., Baek, C. and Kirscht, F., Raman microspectroscopy study of processing-induced phasetransformationsandresidualstress in silicon, Semicond. Sci.Technol., 1999, 14, 936944.Google Scholar
4. Bradby, J.E., Williams, J.S. and Wong-Leung, J., Mechanical deformation in silicon by micro-indentation, J.Mater. Res., 2001, 16(5), 15001507.Google Scholar
5. Bradby, J.E., Williams, J.S., Swain, Wong-Leung M.V. and Muroe, P., Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon, Applied Physics Letters, 2000, 77(23), 37493751.Google Scholar