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Critical Parametres of Quasi-one-dimensional Growth of Nanowires According to the Scheme Vapor→ Liquid Drop → Crystal.

Published online by Cambridge University Press:  30 June 2011

V.A. Nebolsin
V.A. Nebolsin*
Affiliation:
Voronezh State Technical University, Moskovskii pr. 14, Voronezh, 394026 Russia.
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Abstract

We have determined critical parametres that restrict the vapor→liquid drop→solid growth of silicon NWs. We demonstrate that there are maximum and minimum critical radii for NW growth and identify boundary conditions that lead to solvent droplet breakdown and crystal branching.

Keywords

crystal growthSicatalytic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1350: Symposium EE – Semiconductor Nanowires—From Fundamentals to Applications , 2011 , mrss11-1350-ee03-14
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Thelander, C., Agarwal, P., Brongersma, S., et al. ., Nanowire-Based One-Dimensional Electronics, Mater. Today 9, 28–35 (2006).Google Scholar
2. Suyatin, D.B., Peterson, Kh., Maksimov, I., et al. ., Properties of Electrical Contacts to Nanowhiskers, Vestn. Voronezh. Gos. Tekh. Univ. 3, 67–70 (2007).Google Scholar
3. Wagner, R.S. and Ellis, W.C., Vapour–Liquid–Solid Mechanism of Single Crystal Growth, Appl. Phys. Lett. 4(5), 89–90 (1964).Google Scholar
4. Givargizov, E.I., Rost nitevidnykh i plastinchatykh kristallov iz para (Vapor Growth of Whiskers and Platelike Crystals), Nauka, Moscow, (1977).Google Scholar
5. Dick, K.A., Deppert, K., Larsson, M.W., et al. ., Synthesis of Branched “Nanotrees” by Controlled Seeding of Multiple Branching Events, Nat. Mater., 3, 380–384 (2004).Google Scholar
6. Roper, S.M., Davis, S.H., Norris, S.A., and Golovin, A.A., Steady Growth of Nanowires via the Vapor–Liquid–Solid Method, J. Appl. Phys., 102 (paper 034 304) (2007).Google Scholar
7. Nebol’sin, V.A., Dolgachev, A.A., Dunaev, A.I., and Zavalishin, M.A., General Trends in the Growth of Silicon Micro- and Nanowhiskers, Izv. Ross. Akad. Nauk, Ser. Fiz., 72 (9), 1285–1288 (2008).Google Scholar
8. Tatarchenko, V.A., Ustoichivyi rost kristallov (Stable Crystal Growth), Nauka, Moscow, (1988).Google Scholar
9. Antipov, B.L., Materialy elektronnoi tekhniki (Electronic Materials), Vysshaya Shkola, Moscow, (1990).Google Scholar
10. Nebol’sin, V.A., and Shchetinin, A.A., A Mechanism of Quasi-One-Dimensional Vapor Phase Growth of Si and GaP Whiskers, Inorg. Mater., 44(10), 1033–1040 (2008).Google Scholar
11. Nebol’sin, V.A. and Shchetinin, A.A., Role of Surface Energy in the Vapor–Liquid–Solid Growth of Silicon, Inorg. Mater., 39(9), 899–903 (2003).Google Scholar
12. Runyan, W.R., Silicon Semiconductor Technology, McGraw-Hill, New York, (1965).Google Scholar
13. Nebol’sin, V.A. and Shchetinin, A.A., Rost nitevidnykh kristallov (Whisker Growth), Voronezh. Gos. Univ., Voronezh, (2003).Google Scholar
14. Nebol’sin, V.A., Dunaev, A.I., and Zavalishin, M.A., Effect of the Line Tension at the Vapor–Liquid–Solid Boundary on the Growth of Silicon Nanocrystals, Inorg. Mater., 44(6), 559–562 (2008).Google Scholar
15. Schmidt, V., Senz, S., and Gosele, U., The Shape of Epitaxially Grown Silicon Nanowires and the Influence of Line Tension, J. Appl. Phys., 80, 445–450 (2005).Google Scholar