Hostname: page-component-68945f75b7-72kh6 Total loading time: 0 Render date: 2024-08-06T03:20:23.236Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation Between the Microstructures and the Electrical Properties of Ni/Au/Te/Au Contacts on n-GaAs

Published online by Cambridge University Press:  25 February 2011

X. W. Lin ,
J. Watté ,
K. Wuyts ,
W. Swider ,
R.E. Silverans ,
Z. Liliental-Weber  and
J. Washburn
X. W. Lin
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
J. Watté
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnétisme, K.U. Leuven, B-3001 Leuven, Belgium
K. Wuyts
Affiliation:
lnteruniversitair Micro-Electronica Centrum (IMEC), Kapeldreef, 75, B-3001, Leuven, Belgium
W. Swider
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
R.E. Silverans
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnétisme, K.U. Leuven, B-3001 Leuven, Belgium
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
J. Washburn
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
Get access

Abstract

The structural evolution of Ni/Au/Te/Au contacts on n-GaAs (001) was examined, in correlation with their electrical properties as a function of rapid thermal annealing in the temperature range 350 - 600°C. It was found that heating at temperatures ≥ 550°C results in the formation of ohmic contacts, while contacts annealed at lower temperatures remain nonohmic. Transmission electron microscopy revealed that heating ≥ 450°C leads to extensive reactions between Ni/Au/Te/Au and GaAs and deep spike formation into the GaAs. The major reaction products were identified as NiAs and β-AuGa. Ga2Te3 grains, growing epitaxially on GaAs, were detected only in 550°C annealed samples. Heating to 600°C caused considerable Ga2Te3 loss. Implications of these results concerning the ohmic contact formation mechanism are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 295
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Robinson, G.Y., in Physics and Chemistry of III-V Compound Semiconductor Interfaces, edited by Wilmsen, C.W., (Plenum Press, New York, 1985), p. 73.CrossRefGoogle Scholar
2 Sebestyen, T., Solid-State Electron. 25, 543 (1982).CrossRefGoogle Scholar
3 Palmstrøm, C.J., Schwarz, S.A., Yablonovitch, E., Harbison, J.P., Schwartz, C.L., Florez, L.T., Gmitter, T.J., Marshall, E.D., and Lau, S.S., J. Appl. Phys. 67, 334 (1990).CrossRefGoogle Scholar
4 Wuyts, K., Watté, J., Vanderstraeten, H., Langouche, G., Silverans, R.E., Münder, H., Berger, M.G., Liith, H., Van Hove, M., Bender, H., and Van Rossum, M., Phys. Rev. B 45, 11863 (1992) and references therein.CrossRefGoogle Scholar
5 Watté, J., Wuyts, K., Silverans, R.E., Van Hove, M., and Van Rossum, M., J. Appl. Phys. 75, 2055(1994).CrossRefGoogle Scholar
6 Lin, X.W., Piotrowska, A., Kaminska, E., Liliental-Weber, Z., Washburn, J., and Weber, E., Appl. Phys. Lett. 62, 2995 (1993).CrossRefGoogle Scholar
7 Piotrowska, A., Kaminska, E., Lin, X. W., Liliental-Weber, Z., Washburn, J., Weber, E., Gierlotka, S., Adamczewska, J., Kwiatkowski, S., and Turos, A., J. Vac. Sci. Technol. B 11, 572 (1993) and references therein.CrossRefGoogle Scholar
8 Villars, P. and Calvert, L.D., Pearson’s Handbook of Crystallographic Data for Intermetallic Phases, vol. 2 (American Society for Metals, Metals Park, OH, 1985).Google Scholar
9 Guymont, M., Tomas, A., and Guittard, M., Philos. Mag. A 66, 133 (1992).CrossRefGoogle Scholar