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Conductivity Control of AlGaN. Fabrication of AlGaN/GaN Multi-Heterośtructure and their Application to UV/Blue Light Emitting Devices

Published online by Cambridge University Press:  25 February 2011

I. Akasaki  and
H. Amano
I. Akasaki
Affiliation:
Nagoya University, Department of Electronics, Furo-cho Nagoya 464–01, Japan
H. Amano
Affiliation:
Nagoya University, Department of Electronics, Furo-cho Nagoya 464–01, Japan
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Abstract

The method for controlling the electrical properties of n-type GaN and AIGaN have been established. Both GaN and AIGaN films having p - type conduction have been realized for the first time. High quality AIGaN/GaN mu I t i-he t er ostrueture showing clear quantum size effect has been fabricated. P-n junction type UV/blue LED with double he t e ros t rue ture have been developed for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 383
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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