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Condensation Mechanism for the Formation of Relaxed SiGe Layer Grown-on-Insulator

Published online by Cambridge University Press:  01 February 2011

Hun-Joo Lee
Affiliation:
aramis512@hotmail.com, Han Yang University, Nano scale semiconductor Enginnering, Room #101, HIT. Hanyang University 17 Haengdang-dong, Seoungdong-gu, Seoul, KOREA, Seoul, 133-791, Korea, Republic of, +82 2 2220 0234, +82 2 2296 1179
Gon-Sub Lee
Affiliation:
gslee@hanyang.ac.kr, Hanyang University, Nano scale semiconductor Enginnering, Nano SOI Process Laboratory, Room #101, HIT. Hanyang University 17 Haengdang-dong, Seoungdong-gu, Seoul, 133-791, Korea, Republic of
Young-Soo Han
Affiliation:
hanys79@hanmail.com, Hanyang University, Nano scale semiconductor Enginnering, Nano SOI Process Laboratory, Room #101, HIT. Hanyang University 17 Haengdang-dong, Seoungdong-gu, Seoul, 133-791, Korea, Republic of
Seuck-Hoon Hong
Affiliation:
fnvm82@dreamwiz.com, Hanyang University, Nano scale semiconductor Enginnering, Nano SOI Process Laboratory, Room #101, HIT. Hanyang University 17 Haengdang-dong, Seoungdong-gu, Seoul, 133-791, Korea, Republic of
Tae-Hun Shim
Affiliation:
thshim@hanyang.ac.kr, Hanyang University, Nano scale semiconductor Enginnering, Nano SOI Process Laboratory, Room #101, HIT. Hanyang University 17 Haengdang-dong, Seoungdong-gu, Seoul, 133-791, Korea, Republic of
Jae-Gun Park
Affiliation:
parkjgl@hanyang.ac.kr, Hanyang University, Nano scale semiconductor Enginnering, Nano SOI Process Laboratory, Room #101, HIT. Hanyang University 17 Haengdang-dong, Seoungdong-gu, Seoul, 133-791, Korea, Republic of
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Abstract

The condensation method to grow a strained SiGe layer-on-insulator (ε-SGOI) has attracted interests for the application of high speed complementary metal–oxide–semiconductor field-effect transistors (CMOSFETs) because of high quality properties and effective process cost. Although many reports presented its superiority in a device performance to bonding and dislocation sink technologies, the mechanism by which the condensation method produces ε-SGOI has also not been clearly explained and the surface properties have not been evaluated. Thus, we investigated condensation mechanism in detail by characterizing a surface property and Ge profile in SiGe layer. For the experiment, first, a SiGe layer on silicon-on-insulator layer was epitaxally grown at 550 °C, and three different oxidation thicknesses were grown at 950 °C, i.e., 40, 60, 90 nm. From our investigation results, we found that there are three steps in producing ε-SGOI. For the first step, by the 40-nm-thick oxidation, a diffusion of Ge atoms in SiGe layer into Si layer-on-insulator was generated and Ge atoms were segregated into only surface oxide. It was observed that Ge profile of SiGe layer was shown a less graded profile. And, in the second step with 60-nm-thick oxidation, Ge atoms in SiGe layer into Si layer-on-insulator was diffused further than a first step did and Ge atoms were segregated into surface oxide. It was observed that Si layer was shown a fully graded profile. Lastly, in the third step with 90-nm-thick oxidation, the diffusion of Ge atoms in SiGe layer into Si layer-on-insulator was finished completely and Ge atoms were segregated into both surface and buried oxides. It was confirm that Ge profile of SiGe layer was shown a Gaussian profile rather than a graded profile, and dislocation sink occurred. Therefore, our talk will focus on the explanation for the mechanism by which condensation method produces ε-SGOI via characterizing a surface property, SiGe thickness, a remained Si thickness on insulator, and Ge concentration in SiGe layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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