Hostname: page-component-5c6d5d7d68-qks25 Total loading time: 0 Render date: 2024-09-01T06:43:08.697Z Has data issue: false hasContentIssue false

Computer Simulation Study of Thin Film Formation Process

Published online by Cambridge University Press:  21 February 2011

Yasushi Sasajima
Affiliation:
Ibaraki University, Faculty of Engineering, 4–12–1 Nakanarusawa-cho, Ibaraki, Hitachi 316, Japan
Satoru Ozawa
Affiliation:
Ibaraki University, Faculty of Engineering, 4–12–1 Nakanarusawa-cho, Ibaraki, Hitachi 316, Japan
Ryoichi Yamamoto
Affiliation:
Tokyo University, Research Center for Advanced Science and Technology, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
Get access

Abstract

The thin film formation process was studied by the molecular dynamics(MD) method and by the hybrid method which combined the MD method with the Monte Carlo(MC) simulation technique. The Morse potential was assumed as the atomic interaction model. The substrate temperature was changed to see its effect on the film structure. The MD simulation found that the reconstruction process of the deposited nuclei was essential to determine the metastable film structure and that the relaxed atomic arrangements were strongly dependent on the depth of the interaction potentials. The hybrid method simulated the high rate deposition process and confirmed the results of the MD simulation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bauer, E. and Poppa, H., Thin Solid Films, 12, 167(1972)Google Scholar
2. Venables, J. A., Thin Solid Films, 32, 135(1976); Phys. Rev. B36, 4153(1987)Google Scholar
3. Black, J.E. and Bopp, P., Phys.Rev. B34, 7410(1986)Google Scholar
4. Schneider, M., Rahman, A. and Schuller, I.K., Phys. Rev. Lett. 55, 604(1985)Google Scholar
5. Schneider, M., Schuller, I.K. and Rahman, A., Phys. Rev. B36, 1340(1987)Google Scholar
6. Luedtke, W.D. and Landman, U., Phys. Rev. B40, 11733(1989)Google Scholar
7. Hara, K., Ikeda, M., Ohtsuki, O., Terakura, K., Mikami, M., Tago, Y. and Oguchi, T., Phys. Rev. B39, 9476(1989)Google Scholar
8. Sasajima, Y., Nakagawa, S., Miyamoto, E. and Imabayashi, M., J. Crystal Growth 99, 496(1990)Google Scholar
9. Kwon, I., Biswas, R., Grest, G.S. and Soukoulis, C.M., Phys. Rev. B41, 3678(1990)Google Scholar
10. Sasajima, Y. and Yamamoto, R., Molecular Physics, to be publishedGoogle Scholar
11. LeGoues, F.K., Copel, M. and Tromp, R., Phys. Rev. Lett. 63, 1826(1989)Google Scholar
12. Eaglesham, D.J. and Cerullo, M., Phys. Rev. Lett. 64, 1943(1990)Google Scholar
13. Dovek, M.M., Lang, C.A., Nogami, J. and Quate, C.F., Phys. Rev. B40, 11973(1989)Google Scholar
14. Fenter, P. and Gustafsson, T., Phys. Rev. Lett. 64, 1142(1990)Google Scholar