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Completely Integrated Contact-Type a-Si/a-SiC Heterojunction Image Sensor with Poly-Si TFT Drivers

Published online by Cambridge University Press:  25 February 2011

Hajime Kurihara ,
Tetsuyoshi Takeshita  and
Shinji Morozumi
Hajime Kurihara
Affiliation:
Research & Development Division, Seiko Epson Corporation, 3-3-5 Owa, Suwa, Nagano, Japan 392
Tetsuyoshi Takeshita
Affiliation:
Research & Development Division, Seiko Epson Corporation, 3-3-5 Owa, Suwa, Nagano, Japan 392
Shinji Morozumi
Affiliation:
Research & Development Division, Seiko Epson Corporation, 3-3-5 Owa, Suwa, Nagano, Japan 392
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Abstract

This paper describes the performance of both an 8 dots/mm and a 400 DPI contact-type linear image sensors which integrate poly-Si TFT scanning circuits and a-Si/a-SiC heterojunction photodiodes on the same substrate. Each of these image sensors provides excellent cost and performance for their applications. In particular, the 400 DPI image sensor has achieved a higher scanning speed of 1 msec/line by using the integrated scanning circuits with hydrogenated poly-Si TFTs having high carrier mobility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 221
Copyright
Copyright © Materials Research Society 1989

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References

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