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A Comparison of The Roughness of Various Si/SiO2 Interfaces Using Synchrotron X-Ray Diffraction

Published online by Cambridge University Press:  21 February 2011

Mau-Tsu Tang
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
K.K. Evans-Lutrerodt
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
G.G. Higashi
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
T. Boone
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
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Abstract

We use synchrotron X-ray diffraction to non-destructively characterize the roughness of various Si(001) interfaces. On the same sample, we compare the roughness of a buried Si(001)/SiO2 interface with the clean, reconstructed Si(001)/vacuum interface formed by desorption of the oxide. We also compare three different types of oxide; a native oxide, a dry thermal oxide, and a chemically grown RCA-clean type of oxide. We show that the dry thermal oxide interface is 0.5±0.1 times as rough as the native oxide interface, suggesting that the oxide growth decreases the roughness slightly.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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