Skip to main content Accessibility help
×
Home
Hostname: page-component-768ffcd9cc-kfj7r Total loading time: 0.242 Render date: 2022-12-04T09:22:07.917Z Has data issue: true Feature Flags: { "useRatesEcommerce": false } hasContentIssue true

Comparison of Microwave Dielectric Properties of between (001) and (011) Ferroelectric Ba1-xSrxTiO3 Thin Films grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

Seung Eon Moon
Affiliation:
Wireless Communication Devices Department, Electronics and Telecommunications Research Institute, Taejon, 305-350, Korea.
Eun-Kyoung Kim
Affiliation:
Wireless Communication Devices Department, Electronics and Telecommunications Research Institute, Taejon, 305-350, Korea.
Su-Jae Lee
Affiliation:
Wireless Communication Devices Department, Electronics and Telecommunications Research Institute, Taejon, 305-350, Korea.
Seok-Kil Han
Affiliation:
Wireless Communication Devices Department, Electronics and Telecommunications Research Institute, Taejon, 305-350, Korea.
Kwang-Yong Kang
Affiliation:
Wireless Communication Devices Department, Electronics and Telecommunications Research Institute, Taejon, 305-350, Korea.
Won-Jeong Kim
Affiliation:
Wireless Communication Devices Department, Electronics and Telecommunications Research Institute, Taejon, 305-350, Korea.
Get access

Abstract

The effects of anisotropic dielectric properties of ferroelectric Ba1-xSrxTiO3 (BST) films on the characteristics of phase shifter have been studied in microwave regions at room temperature. Ferroelectric BST films with (001) and (011) orientation were epitaxially grown on (001) and (011) MgO substrates, respectively, by pulsed laser deposition method. The structures of BST films were investigated using x-ray diffraction measurement. The microwave properties of orientation engineered BST films were investigated using coplanar waveguide transmission lines that were fabricated on BST films using a thick metal layer by photolithography and etching process. The measured differential phase shift and insertion loss (S21) for (011) BST films are larger than those for (001) BST films. Dielectric constants of the ferroelectric BST films are calculated from the measured S21 using a modified conformal-mapping model.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lancaster, M. J., Powell, J., and Porch, A., Supercond. Sci. Technol. 11, 1323 (1998).CrossRefGoogle Scholar
2. Mantese, J. V., Schubring, N. W., Micheli, A. L., Catalan, A. B., Mohammed, M. S., Naik, R., and Auner, G. W., Appl. Phys. Lett. 71, 2047 (1997).CrossRefGoogle Scholar
3. Chang, W., Gilmore, C. M., Kim, W. J., Pond, J. M., Kirchoefer, S. W., Qadri, S. B., Chirsey, D. B., and Horwitz, J. S., J. of. Appl. Phys. 87, 3044 (2000).CrossRefGoogle Scholar
4. Keuls, F. W. Van, Mueller, C. H., Miranda, F. A., Romanofsky, R. R., Canedy, C. L., Aggarwal, S., Venkatesan, T., Ramesh, R., Horwitz, J. S., Chang, W., and Kim, W. J., IEEE MTT-S 2, 737 (1999).Google Scholar
5. Jun, S., Kim, Y. S., Kim, Y. W., and Lee, J., Appl. Phys. Lett. 78, 2542 (2001).CrossRefGoogle Scholar
6. Carlson, C. M., Rivkin, T. V., Parilla, P. A., Perkins, J. D., Ginley, D. S. Kozyrev, A. B., Oshadchy, V. N., and Pavlov, A. S., Appl. Phys. Lett. 76, 1920 (2000).CrossRefGoogle Scholar
7. Canedy, C. L., Aggarwal, S., Li, H., Venkatesan, T., Ramesh, R. Keuls, F. W. Van, Romanofsky, R. R., and Miranda, F. A., Appl. Phys. Lett. 77, 1523 (2000).CrossRefGoogle Scholar
8. Erker, E. G., Nagra, A. S., Liu, Y., Periaswamy, P., Taylor, T. R., Speck, J., and York, R. A., IEEE Micro. And Guided Wave Lett. 10, 10 (2000).CrossRefGoogle Scholar
9. Park, B. H., Peterson, E.J., Jia, Q. X., Lee, J., Zeng, X., Si, W., and Xi, X. X., Appl. Phys. Lett. 78, 533 (2001).CrossRefGoogle Scholar
10. Chang, W., Horwitz, J. S., Kim, W. J., Pond, J. M., Krichoefer, S. W., Gilmore, C. M., Qadri, S. B., and Chrisey, D. B., Mat. Res. Soc. Symp. Proc. 541, 699 (1999).CrossRefGoogle Scholar
11. Sengupta, L. C., Ngo, E., O'Day, M. E., Stowell, S., and Lancto, R., ISAF '94. Proceedings of the Ninth IEEE International Symposium on Applications of Ferroelectrics 622 (1995).Google Scholar
12. Kim, W. J., Chang, W., Qadri, S. B., Pond, J. M., Krichoefer, S. W., Chrisey, D. B., and Horwitz, J. S., Appl. Phys. Lett. 76, 1185 (2000).CrossRefGoogle Scholar
13. Chang, W., Horwitz, J. S., Kim, W. J., Pond, J. M., Krichoefer, S. W., Gilmore, C. M., Qadri, S. B., and Chrisey, D. B., Mat. Res. Soc. Symp. Proc. 541, 693 (1999).CrossRefGoogle Scholar
14. Kim, W. J., Chang, W., Qadri, S. B., Pond, J. M., Kirchoefer, S. W., Horwitz, J. S., and Chrisey, D.B., Appl. Phys. A 70, 313 (2000).CrossRefGoogle Scholar
15. Gevorgian, S. S., Martinsson, T., Linner, P. I. J., and Kollberg, E.L., IEEE Trans. Microwave Theory Tech. 44, 896 (1996).CrossRefGoogle Scholar
16. Carlsson, E., and Geovorgian, S., IEEE Trans. Microwave Theory Tech. 47, 1544 (1999).CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Comparison of Microwave Dielectric Properties of between (001) and (011) Ferroelectric Ba1-xSrxTiO3 Thin Films grown by Pulsed Laser Deposition
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Comparison of Microwave Dielectric Properties of between (001) and (011) Ferroelectric Ba1-xSrxTiO3 Thin Films grown by Pulsed Laser Deposition
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Comparison of Microwave Dielectric Properties of between (001) and (011) Ferroelectric Ba1-xSrxTiO3 Thin Films grown by Pulsed Laser Deposition
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *