Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-6f8dk Total loading time: 0.34 Render date: 2021-02-25T11:44:26.443Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Comparison of Current-Induced Migration of Be and C in GaAs/AlGaAs HBTs

Published online by Cambridge University Press:  03 September 2012

F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
T. R. Fullowan
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
J. R. Lothian
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
P. W. Wisk
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
R. F. Kopf
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
A. B. Emerson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
S. W. Downey
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
Get access

Abstract

We contrast the stability under bias-aging conditions of GaAs/AlGaAs HBTs utilizing highly Be- or C-doped base layers. Devices with Be doping display a rapid degradation of dc current gain and junction ideality factor. At 200°C, a 2 × 10 μm2 Be-doped device (4 × 1019cm−3 base doping) operated at a current density of 2.5 × 104 A. cm−2 shows a decrease in gain from 16 to 1.5 within 2h. Under the same conditions a C-doped device with even higher base-doping (7 × 1019 cm−3) is stable over periods of 36h, the longest time we tested our structures. The degradation of Be-doped devices is consistent with the mechanism of recombination-enhanced diffusion of interstitials into the adjoining layers. Similar results are obtained with Zn-doped devices. Since C occupies the As sub-lattice rather than the Ga sublattice as with Be and Zn, it is not susceptible to reaction with Ga interstitials injected during growth or bias-aging.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Enquist, P. M., Hitchby, J. A., and de Lyon, T. J., J. Appl. Phys. 63, 4485 (1988).CrossRefGoogle Scholar
2. Hobson, W. S., Pearton, S. J., and Jordan, A. S., Appl. Phys. Lett. 56, 1251 (1990).CrossRefGoogle Scholar
3. Kopf, R. F., Kuo, J. M., Downey, S. W. and Emerson, A. B. (to be published).Google Scholar
4. See, for example, Asbeck, P. M., in High Speed Semiconductor Devices, edited by Sze, S. M. (Wiley-Interscience, New York, 1990), Chap. 6.Google Scholar
5. Nakayima, O., Ito, H., Nittono, T., and Nagata, K., Technical Digest of the International Electron Device Meeting, San Francisco, Dec. 1990 IEEE, New York, 1990), pp. 673676.CrossRefGoogle Scholar
6. Hafizi, M. E., Paulowicz, L. M., Tran, L. T., Umemoto, D. K., Streit, D. C., Oki, A. K., Kim, M. E., and Yen, K. H., Technical Digest of the GaAs IC Symposium, New Orleans, Oct. 1990 (IEEE, New York, 1990), pp. 329332.Google Scholar
7. Uematsu, M. and Wada, K., Appl. Phys. Lett. 58, 2015 (1991).CrossRefGoogle Scholar
8. Ren, F., Fullowan, T. R., Abernathy, C. R., Pearton, S. J., Smith, P. R., Kopf, R. F., Laskowski, E. J., and Lothian, J. R., Electron. Lett. 27, 1009 (1991).Google Scholar
9. Ren, F., Pearton, S. J., Hobson, W. S., Fullowan, T. R., Lothian, J., and Yanof, A. W., Appl. Phys. Lett. 56, 860 (1990).CrossRefGoogle Scholar
10. Downey, S. W., Kopf, R. F., Schüben, E. F., and Kuo, J. M., Appl. Opt. 29, 4938 (1990).CrossRefGoogle Scholar
11. Hoffer, G. E., Klatt, J., Baillargeon, J. N., Hseih, D. C., Averback, R. S., Cheng, K. Y., and Stillman, G. E., Prog. Fall 1991 Materials Research Society Conf. (Boston, MA), p. 46.Google Scholar
12. Bierack, J. P. and Haggmack, L. G., Nucl. Instrum. Methods 174, 257 (1980).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 7 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 25th February 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Comparison of Current-Induced Migration of Be and C in GaAs/AlGaAs HBTs
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Comparison of Current-Induced Migration of Be and C in GaAs/AlGaAs HBTs
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Comparison of Current-Induced Migration of Be and C in GaAs/AlGaAs HBTs
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *