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Co/HfO2 core shell nanocrystal memory

Published online by Cambridge University Press:  01 February 2011

Huimei Zhou
Affiliation:
hzhou@ee.ucr.edu, UCR, Department of Electrical Engineering, Riverside, California, United States
James Anthony Dorman
Affiliation:
jadorman@ucla.edu
Ya-Chuan Perng
Affiliation:
sandyperng@ucla.edu, UCLA, Department of Chemical Engineering, Los Angeles, California, United States
Stephanie Gachot
Affiliation:
sgachot@ucla.edu, UCLA, Department of Chemical Engineering, Los Angeles, California, United States
Jian Huang
Affiliation:
jian.huang002@email.ucr.edu, UCR, Department of Electrical Engineering, Riverside, California, United States
Yuanbing Mao
Affiliation:
yuanbing@seas.ucla.edu, UCLA, Department of Chemical Engineering, Los Angeles, California, United States
Jane Chang
Affiliation:
jpchang@seas.ucla.edu, UCLA, Department of Chemical Engineering, Los Angeles, California, United States
Jianlin Liu
Affiliation:
jianlin@ee.ucr.edu
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Abstract

Metal/high-k dielectric core shell nanocrystal memory capacitor was demonstrated. This kind of MOS memory shows good performance in charge storage capacity, programming and erasing speed. By using a self-assembled Block Co-Polymer, Co/HfO2 core shell nanocrystals were well arrayed and showed uniform dot size and inter distance between dots. Compared with traditional metal nanocrystal fabrication process with E-Beam Evaporation followed by RTA (Rapid Thermal Annealing), core shell nanocrystal memory prepared by Block Co-Polymer produces a wide memory window of 8.4V at the ±12 V voltage sweep. Co/HfO2 core shell nanocrystals prepared by low-temperature Block Co-polymer process ensure high reliability of the devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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