Hostname: page-component-5c6d5d7d68-sv6ng Total loading time: 0 Render date: 2024-08-15T00:31:25.834Z Has data issue: false hasContentIssue false
  • English
  • Français

CO2 Laser Cleaning of Hydrophilic Oxidized Silicon Surfaces

Published online by Cambridge University Press:  15 February 2011

S. Boughaba ,
E. Sacher  and
M. Meunier
S. Boughaba
Affiliation:
École Polytechnique de Montréal, Département de Génie Physique, Groupe des Couches Minces, C. P. 6079, Succ. “Centre-Ville”, Montréal (Québec), Canada H3C 3A7
E. Sacher
Affiliation:
École Polytechnique de Montréal, Département de Génie Physique, Groupe des Couches Minces, C. P. 6079, Succ. “Centre-Ville”, Montréal (Québec), Canada H3C 3A7
M. Meunier
Affiliation:
École Polytechnique de Montréal, Département de Génie Physique, Groupe des Couches Minces, C. P. 6079, Succ. “Centre-Ville”, Montréal (Québec), Canada H3C 3A7
Get access

Abstract

The removal of particles as small as 0.1 μm was achieved using a pulsed CO2 laser to induce the explosive vaporization of condensed water. The surfaces used were hydrophilic oxidized silicon. The contaminant particles were 0.1 μm alumina, 0.1-0.2 μm fumed silica, and 0.1 μm polystyrene latex; their zeta potentials in water vary from positive to negative. The effect of the laser beam energy flux on the cleaning efficiency was thoroughly investigated. It was varied between 0.5 and 3 J/cm2. Whatever the nature of the contaminants, the cleaning process was characterized by an upper limit, the surface damage threshold energy density, determined to be 1.5 J/cm2. If the removal efficiency drops for the lowest beam energy flux, i.e., 0.5 J/cm2, and 0.1 μmAl2O3 particles, no single, sharp removal threshold was observed. Another parameter of importance investigated was the thickness of the condensed water. It was varied by changing the time of exposure of the substrate surface to water vapor before laser irradiation, the vapor flow being fixed to 4700 ml/min. Exposure times ranging from 1.5 to 2.5 s were evaluated to be the most effective.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 497
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Hattori, T., Sol. State Technol. 33 (7), SI (1990).Google Scholar
2 Kern, W., J. Electrochem. Soc. 137, 1887 (1990).Google Scholar
3 Kern, W., in Handbook of Semiconductor Wafer Cleaning Technology. Science, Technology and Applications, edited by Kern, W. (Noyes Publications, Park Ridge, N. J., 1993), p. 3 and p. 595.Google Scholar
4 Menon, V. B. and Donovan, R. P., in Handbook of Semiconductor Wafer Cleaning Technology. Science. Technology and Applications, edited by Kern, W. (Noyes Publications, Park Ridge, N. J., 1993), p. 379.Google Scholar
5 Roy, S., Ali, I., Shinn, G., Furusawa, N., Shah, R., Peterman, S., Witt, K., Eastman, S., and Kumar, P., J. Electrochem. Soc. 142, 216 (1995).Google Scholar
6 Myers, T. L., Fury, M. A., and Krusell, W. C., Sol. State. Technol. 38 (10), 59, (1995).Google Scholar
7 Krusell, W. C., de Larios, J. M., and Zhang, J., Sol. State. Technol. 38 (6), 109, (1995).Google Scholar
8 Qi, Q. and Brereton, G. J., IEEE Trans, on Ultrason., Ferroelect. Freq. Contr. 42, 619 (1995).Google Scholar
9 Ruzyllo, J., in Handbook of Semiconductor Wafer Cleaning Technology. Science. Technology and Applications, edited by Kern, W. (Noyes Publications, Park Ridge, N. J., 1993), p. 201.Google Scholar
10 Imen, K., Lee, S. J., and Allen, S. D., Appl. Phys. Lett. 58, 203 (1991).Google Scholar
11 Lee, S. J., Imen, K., and Allen, S. D., Appl. Phys. Lett. 61, 2314 (1992).Google Scholar
12 Lee, S. J., Imen, K., and Allen, S. D., J. Appl. Phys. 74, 7044 (1993).Google Scholar
13 Zapka, W., Ziemlich, W., and Tarn, A. C., Appl. Phys. Lett. 58, 2217 (1991).Google Scholar
14 Tarn, A. C., Zapka, W., and Ziemlich, W., in Lasers in Microelectronics Manufacturing. SPIE Proc, Vol. 1598, (SPIE, Bellingham, 1991), p. 13.Google Scholar
15 Tarn, A. C., Leung, W. P., Zapka, W., and Ziemlich, W., J. Appl. Phys. 71, 3515 (1992).Google Scholar
16 Zapka, W., Ziemlich, W., Leung, W. P., and Tam, A. C., Adv. Mater. Opt. Electr. 2, 63 (1993).Google Scholar
17 Engelsberg, A. C., in Surfaces Chemical Cleaning and Passivation for Semiconductor Processing, Mater. Res. Soc. Proc, Vol. 315, edited by Higashi, G. S., Irene, E. A. and Ohmi, T., (Materials Research Society, Pittsburgh, PA, 1993), p. 255.Google Scholar
18 Engelsberg, A. C., in Optical System Contamination : Effects, Measurements and Control IV. SPIE Proc, Vol. 2261, edited by Glassford, A. P. M. (SPIE, Bellingham, 1994), p. 312.Google Scholar
19 Engelsberg, A. C., 40th Annual Institute of Environmental Sciences Meeting, Chicago, Illinois, May 1–6 (1994).Google Scholar
20 Héroux, J. B., Boughaba, S., Sacher, E., and Meunier, M., Proc. 7th Can. Semicon. Technol. Conf., Ottawa (Canada), August 14–18, 1995, to be published.Google Scholar
21 Héroux, J. B., Boughaba, S., Ressejac, I., Sacher, E., and Meunier, M., J. Appl. Phys., submitted.Google Scholar
22 Donovan, R. P. and Menon, V. B., in Handbook of Semiconductor Wafer Cleaning Technology. Science. Technology and Applications, edited by Kern, W. (Noyes Publications, Park Ridge, N. J., 1993), p. 152.Google Scholar
23 Guosheng, Z., Fauchet, P. M., and Siegman, A. E., Phys. Rev. B26, 5366 (1982).Google Scholar
24 Sipe, J. E., Young, J. F., Preston, J. S., and van Driel, H. M., Phys. Rev. B27, 1141 (1983).Google Scholar