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Characterization of the Structure and Polarity of Twin Boundaries in GaP

Published online by Cambridge University Press:  10 February 2011

Dov Cohent ,
D.L. Medlin  and
C. Barry Carter
Dov Cohent
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota Minneapolis, MN 55455 Sandia National Laboratories, Livermore, CA 94551
D.L. Medlin
Affiliation:
Sandia National Laboratories, Livermore, CA 94551
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota Minneapolis, MN 55455
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Abstract

The structure of planar defects in GaP films grown by MBE on Si (110) was investigated by transmission electron microscopy. Growth of GaP films on the (110) surface produced numerous microtwins which formed both first and second order twin boundaries. Using high-resolution transmission electron microscopy, the atomic structure of Σ=3 and Σ=9 twin boundaries were studied. Both the Σ=3 and Σ=9 interfaces were observed to facet along specific crystallographic planes. Geometric models of the Σ=9 {221} twin boundary accounting for different polar bonding configurations were proposed and compared with experimental observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 613
Copyright
Copyright © Materials Research Society 1998

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