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Characterization of the Silicon / Fluoride Solution Interface by In-Situ Microwave Reflectivity

Published online by Cambridge University Press:  10 February 2011

Arun Natarajan ,
Gerko Oskam ,
Douglas A. Oursler  and
Peter C. Searson
Arun Natarajan
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218.
Gerko Oskam
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218.
Douglas A. Oursler
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218.
Peter C. Searson
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218.
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Abstract

Etching of silicon in aqueous fluoride solutions can lead to almost atomically flat surfaces with a low density of surface states and recombination centers. The final quality of the surface, however, is strongly dependent on the solution composition and pH. We have performed electrochemical impedance spectroscopy in combination with potential modulated microwave reflectance spectroscopy (PMMRS) to elucidate the processes occurring at the surface during etching. PMMRS is a novel technique that only probes the free carriers in the conduction and valence bands and is, under certain conditions, not affected by processes involving electrically active surface states or charge transfer. This unique feature allows us to separate the energetics of the semiconductor from surface processes. Microwave reflectivity (δR) versus potential curves in HF solutions demonstrate the variation of the flatband potential as a function of pH. The AR response in the narrow potential region around the flatband potential and at more negative potentials is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 197
Copyright
Copyright © Materials Research Society 1997

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References

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