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Characterization of polycrystalline Si silicon sheet grown by die casting combined with the Bridgman technique

Published online by Cambridge University Press:  01 February 2011

K. Saito ,
T. Iida ,
D. Akimoto ,
A. Nose ,
Y. Takanashi ,
S. Sakuragi ,
H. Nanba ,
G. Sakuragi  and
T. Shimazaki
K. Saito
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
T. Iida
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
D. Akimoto
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
A. Nose
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
Y. Takanashi
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
S. Sakuragi
Affiliation:
Union Material Inc., 1640 Oshido-Jyoudai, Tone-Machi, Kitasouma, Ibaraki 300–1602, Japan
H. Nanba
Affiliation:
Union Material Inc., 1640 Oshido-Jyoudai, Tone-Machi, Kitasouma, Ibaraki 300–1602, Japan
G. Sakuragi
Affiliation:
Union Material Inc., 1640 Oshido-Jyoudai, Tone-Machi, Kitasouma, Ibaraki 300–1602, Japan
T. Shimazaki
Affiliation:
Union Material Inc., 1640 Oshido-Jyoudai, Tone-Machi, Kitasouma, Ibaraki 300–1602, Japan
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Abstract

Die-casting growth was used for manufacturing the multicrystalline silicon sheet with a size of 100 × 120 × 0.5 mm. During the growth, incorporation of contaminants such as iron, cobalt, nickel and chromium was well suppressed. The average etch-pit density values ranged from 1×104 cm-2 to 4x106 cm-2 for growth rates of 5 to 60 mm/h, respectively. Measurement of minority-carrier lifetime bye microwave-photoconductivity-decay (μ-PCD) method was 0.5 μs for as-grown specimens, suggesting that defects and residual strain exist in the grown sheet. Moreover, post heat treatment at 1473 K reduced the etch-pit density and improved carrier lifetime up to 2.2 μs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L5.45
Copyright
Copyright © Materials Research Society 2005

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References

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