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Characterization of Mn-Doped in 1−x GaxAsyP1−y Grown By Lpee

Published online by Cambridge University Press:  26 February 2011

Shanthi N. Iyer
Affiliation:
North Carolina A & T State University, Greensboro, NC 27411
Ali Abul-Fadl
Affiliation:
North Carolina A & T State University, Greensboro, NC 27411
Ward J. Collis
Affiliation:
North Carolina A & T State University, Greensboro, NC 27411
Mohammad N. Khorrami
Affiliation:
North Carolina A & T State University, Greensboro, NC 27411
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Abstract

Mn-doped In1−x GaxAsyP1−y epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxial (LPEE) technique. The variation of growth velocity of the epilayers with current density and the doping characteristics of Mn in the epilayer has been studied. The temperature dependence of the hole concentration and the mobility has been analysed to determine the donor and acceptor densities, thermal activation energy of the level associated with Mn and the dominant scattering mechanisms that limit the hole mobility. The photoluminescence spectra of the doped epilayers are examined at 10K as a function of the excitation level.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

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