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Characterization of Epitaxial CoSi2 Film Growth on Si(100) by Slow Positron Beam

Published online by Cambridge University Press:  03 September 2012

Ping Liu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Chenglu Lin
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Zuyao Zhou
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Huiming Weng
Affiliation:
Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
Bingzong Li
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Rongdian Han
Affiliation:
Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
Shichang Zou
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
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Abstract

A slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si. Variable-energy (0-20 keV) positrons were implanted into samples at different depths. The Doppler broadening of the annihilation -y-ray energy spectra, measured at a number of different incident positron energies were characterized a line-shape parameter “5”. It was found that the measured S parameters were sensitive to thin film reaction and crystalline characteristics. In particular, the S parameter of epitaxial CoSi2 formed by the ternary reaction was quit different from that of the polycrystalline CoSi2 formed by direct reaction of Co with Si.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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