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Characterization of Epitaxial CoSi2 Film Growth on Si(100) by Slow Positron Beam
Published online by Cambridge University Press: 03 September 2012
A slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si. Variable-energy (0-20 keV) positrons were implanted into samples at different depths. The Doppler broadening of the annihilation -y-ray energy spectra, measured at a number of different incident positron energies were characterized a line-shape parameter “5”. It was found that the measured S parameters were sensitive to thin film reaction and crystalline characteristics. In particular, the S parameter of epitaxial CoSi2 formed by the ternary reaction was quit different from that of the polycrystalline CoSi2 formed by direct reaction of Co with Si.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 233
- Copyright © Materials Research Society 1994