Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node

Published online by Cambridge University Press:  17 March 2011

Simone Severi ,
Kirklen Henson ,
Richard Lindsay ,
Anne Lauwers ,
Bartek J. Pawlak ,
Radu Surdeanu  and
K. De Meyer
Simone Severi
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium K.U.Leuven, ESAT-INSYS, Kasteelpark Arenberg 10, B-3001 Heverlee, Belgium
Kirklen Henson
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Richard Lindsay
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Anne Lauwers
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Bartek J. Pawlak
Affiliation:
Philips Research Leuven
Radu Surdeanu
Affiliation:
Philips Research Leuven
K. De Meyer
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium K.U.Leuven, ESAT-INSYS, Kasteelpark Arenberg 10, B-3001 Heverlee, Belgium
Get access

Abstract

The feasibility of the SPER junction process as a reasonable alternative to the spike anneal junction is proved in this work. Good control of the SCE and performance competitive results as compared to the spike junction are obtained. An analysis of the interaction between the halo dopant and the SPER junctions has been carried out; it is shown that the performance degrades with increasing halo dose as a consequence of an overlap resistance problem.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C10.5
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

[1] Lindsay, R. et al. , J. Vac. Sci. Technol. B 22, 306 (2004).CrossRefGoogle Scholar
[2] Pawlak, B. J. et al. , J. Vac. Sci. Technol. B 22, 297 (2004),CrossRefGoogle Scholar
[3] Angelucci, R. et al. , J. Electrochem. Soc., vol. 134, no. 12, December 1987, p. 3130–3134 CrossRefGoogle Scholar
[4] Fair, R.B., J.Electrochem. Soc., vol. 137, no. 2, August 1990, p. 667–671.CrossRefGoogle Scholar
[5] Severi, S. et al. , ULIS'2003 ProceedingsGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 14 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 28th January 2021. This data will be updated every 24 hours.

7 Cited by
Hostname: page-component-898fc554b-z76t5 Total loading time: 0.366 Render date: 2021-01-28T02:07:20.688Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *