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Carbon Nanotube Deposition using Helicon Plasma CVD at Low Temperature

Published online by Cambridge University Press:  01 February 2011

Masakazu Muroyama ,
Takao Yagi ,
Kouji Inoue  and
Ichiro Saito
Masakazu Muroyama
Affiliation:
Sony Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa, 243-0021, JAPAN
Takao Yagi
Affiliation:
Sony Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa, 243-0021, JAPAN
Kouji Inoue
Affiliation:
Sony Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa, 243-0021, JAPAN
Ichiro Saito
Affiliation:
Sony Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa, 243-0021, JAPAN
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Abstract

We developed a novel growth method of aligned carbon nanotubes. Aligned carbon nanotubes are grown on a metal catalyst on a glass substrate using biased Helicon plasma chemical vapor deposition (HPECVD) of CH4/H2 gases from 400 C to 500 C. The Helicon plasma source is one of the high-density plasma sources and is promising for low temperature carbon deposition. A Ni film was used as a catalyst to reduce the activation energy of the nanotubes' growth. The carbon nanotubes were deposited on the nickel catalysis layer selectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 728: Symposium S – Functional Nanostructured Materials through Multiscale Assembly and Novel Patterning Techniques , 2002 , S8.12
Copyright
Copyright © Materials Research Society 2002

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