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The Capillarity Influence On Shape Of Small Liquid Inclusions Enclosed In A Solid Under Non-Stationary Thermal Conditions

Published online by Cambridge University Press:  17 March 2011

Vladimir Yu. Gershanov ,
Sergey I. Garmashov ,
Andrey R. Minyaev ,
Nickita E. Ivanov  and
Irina Yu. Nosuleva
Vladimir Yu. Gershanov
Affiliation:
Dept of Physics, Rostov State University, 5 Zorge st., Rostov on Don, RUSSIA
Sergey I. Garmashov
Affiliation:
Dept of Physics, Rostov State University, 5 Zorge st., Rostov on Don, RUSSIA
Andrey R. Minyaev
Affiliation:
Dept of Physics, Rostov State University, 5 Zorge st., Rostov on Don, RUSSIA
Nickita E. Ivanov
Affiliation:
Dept of Physics, Rostov State University, 5 Zorge st., Rostov on Don, RUSSIA
Irina Yu. Nosuleva
Affiliation:
Dept of Physics, Rostov State University, 5 Zorge st., Rostov on Don, RUSSIA
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Abstract

An analytical model taking into account the influence of capillarity on the process of changing the cross-sectional shape of a cylindrical liquid inclusion enclosed in an anisotropic crystal under non-stationary thermal conditions is suggested. It is shown that the capillary effect confines the possibilities for controlling the inclusion shape under non-stationary thermal conditions. The capillarity influence becomes stronger with decreasing cross-sectional area and increasing interfacial energy. The results of calculations of the limit inclusion shape under different thermal conditions are presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P3.6
Copyright
Copyright © Materials Research Society 2001

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References

1. Pfann, W.G., Trans. AIME 203, 961 (1955).Google Scholar
2. Anthony, T.R. and Cline, H.E., J.Appl.Phys. 47, 2550 (1976).Google Scholar
3. Tiller, W.A., J.Appl.Phys. 34, 2757 (1963).Google Scholar
4. Cline, H.E. and Anthony, T.R., J.Appl.Phys. 48, 5096 (1977).Google Scholar
5. Cline, H.E. and Anthony, T.R., J.Appl.Phys. 49, 2777 (1978).Google Scholar
6. Gershanov, V.Yu. and Garmashov, S.I., Crystallography Reports 37, 34 (1992).Google Scholar
7. Gershanov, V.Yu., Garmashov, S.I.. Minyaev, A. R., and Beletskaya, A.V. in Semiconductor Process and Device Performance Modelling, edited by Dunham, S.T. and Nelson, J.S., (Mater. Res. Soc. Proc. 490, Warrendale, PA, 1998) pp.135–140.Google Scholar
8. Gershanov, V. Yu., Garmashov, S. I., Beletskaya, A. V., and Minyaev, A. R., Crystallography Reports 45, 519 (2000).Google Scholar
9. Gershanov, V.Yu., Golovanova, L.Z.., and Nikitin, N.I. in Abstracts of the 6th International Conf. on Crystal Growth (Moscow, 10-16 Sept.,1980) 2,10.Google Scholar