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Buried Silicon-Nitride by High Temperature Nitrogen Implantation

Published online by Cambridge University Press:  28 February 2011

U. Bussmann ,
F.H.J. Meerbach  and
E.H. Te Kaat
U. Bussmann
Affiliation:
Institute of Physics, University of Dortmund, POB 500 500, D-4600 Dortmund 50, Federal Republic of Germany
F.H.J. Meerbach
Affiliation:
Institute of Physics, University of Dortmund, POB 500 500, D-4600 Dortmund 50, Federal Republic of Germany
E.H. Te Kaat
Affiliation:
Institute of Physics, University of Dortmund, POB 500 500, D-4600 Dortmund 50, Federal Republic of Germany
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Abstract

Buried silicon nitride layers are formed by high temperature (600-800°C), high dose (0.3-1 x 1018 Ncm -2) nitrogen implantation into silicon. The nitride structure of as-implanted and annealed (6 h at 1200°C) samples is revealed by TEM-analysis. At implantation temperatures up to 600°C an amorphous SixN" layer is formed. At higher temperatures crystalline precipitates are found within an amorphous environment. They are identified as β-Si3N4 by electron diffraction. By subsequent annealing the previously amorphous material crystallizes to a-Si3N4, while the β-grains seem to be stable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 479
Copyright
Copyright © Materials Research Society 1988

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