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Boron Enhanced Diffusion Due to High Energy Ion-Implantation and Its Suppression by Using RTA Process

Published online by Cambridge University Press:  21 February 2011

Atsuki ONO ,
Hitoshi ABIKO  and
Isarai SAKAI
Atsuki ONO
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229 Japan
Hitoshi ABIKO
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229 Japan
Isarai SAKAI
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229 Japan
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Abstract

SIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of ∼2E13cm-2. By systematic analysis, it is found that this anomalous diffusion is most significant in 700∼800°C annealing, and it takes place in the initial stage (less than 30sec for 800°C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1000-1100°C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 319
Copyright
Copyright © Materials Research Society 1995

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