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Boron Doping in Si-MBE

Published online by Cambridge University Press:  22 February 2011

K. Eberl
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktcwn Heights, NY 10598
S. S. Iyer
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktcwn Heights, NY 10598
S. L. Delage
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktcwn Heights, NY 10598
B. A. Ek
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktcwn Heights, NY 10598
J. M. Cotte
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktcwn Heights, NY 10598
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Abstract

We have investigated p-type doping of Si and SiGc layers in M BE by using two different boron sources. One is a SiB alloy which is prepared in situ by melting elemental boron into Si. Typical B concentrations in the source material are a few percent. Doping levels within 1×1018 cm−3 and 5.5×1019 cm−3 can be adjusted within the temperature range of 350°C to 850°C. No indication of segregation or memory effects is found. The activation is between 90 and 100%. The second p-type doping source investigated is a diborane (B2H6) gas source. Diborane provides doping capability in the range between 1016. to 1020. The incorporation efficiency at 550°C is about 2×10'3. It depends on the diborane exposure and the substrate temperature. The activation at 550°C is above 90%. For lower growth temperatures the activation is considerably reduced. The problem of memory effects is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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