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Boron Diffusion in Fluorine Preamorphized Silicon During Rapid Thermal Annealing

Published online by Cambridge University Press:  21 February 2011


H. Kinoshita
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
T. H. Huang
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
P. E. Bakeman
Affiliation:
IBM General Technology Division, Essex Junction, VT 05452

Abstract

The effect of fluorine preamorphization on boron diffusion and activation during rapid thermal annealing (RTA) has been investigated. Compared with low energy B or BF2 implant into crystalline Si, F preamorphization suppressed the transient enhanced diffusion of B and increased dopant activation. Results show that the tail diffusion was absent, and thus the junction depth of the RTA annealed sample was established by the as-implanted B profile. Secondary ion mass spectroscopy and cross-sectional transmission electron micrograph results show F accumulation near the surface and at end-of-range defects. The interaction of F with defects is believed to reduce the B diffusion during RTA.


Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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