Skip to main content Accessibility help
×
Home
Hostname: page-component-54cdcc668b-mmx8t Total loading time: 0.52 Render date: 2021-03-09T11:53:55.128Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Bias Stress Stability of Asymmetric Source-Drain a-Si:H Thin Film Transistors

Published online by Cambridge University Press:  01 February 2011

Kwang-Sub Shin
Affiliation:
luke@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering, San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Seoul, N/A, N/A, Korea, Republic of
Jae-Hoon Lee
Affiliation:
jhlee@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering, San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Seoul, N/A, N/A, Korea, Republic of
Won-kyu Lee
Affiliation:
wklee@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering, San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Seoul, N/A, N/A, Korea, Republic of
Sang-Geun Park
Affiliation:
psg97@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering, San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Seoul, N/A, N/A, Korea, Republic of
Min-Koo Han
Affiliation:
mkh@snu.ac.kr, Seoul National University, School of Electrical Engineering, San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Seoul, N/A, N/A, Korea, Republic of
Get access

Abstract

The threshold voltage (VT) degradation of asymmetric source-drain a-Si:H TFTs due to the electrical stress has been investigated. In the absence of a drain bias (VG=15V, VD=0V), the threshold voltage (VT) shifts of asymmetric TFTs were similar to that of symmetric TFT. However, in the presence of drain bias (VG=15V, VD=20V), the VT shifts of asymmetric TFTs were less than symmetric TFT. The VT shifts of ‘L’ and ‘J’ shaped TFT were 0.29V, 0.24V respectively, while the VT shift of ‘I’ shaped TFT was 0.42V.

The less VT degradation of the asymmetric source-drain a-Si:H TFT compared with the symmetric TFT may be explained by the defect creation model. Since the actual drain width of asymmetric TFT is longer than symmetric TFT at the same W/L ratio, the charge depletion due to the drain bias is larger than that of the asymmetric TFT. Due to the less carrier concentration in the channel, the asymmetric a-Si:H TFT shows the less VT degradation compared with the symmetric TFT.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Goh, J. C., Jang, J., Cho, K. S. and Kim, C. K., IEEE Electron Device Lett., 24 (2003) 583.Google Scholar
2. You, Bong-Hyun, Nam, Woo-Jin, Lee, Jae-Hoon, Han, Chang-Wook and Han, Min-Koo, Society for Information Display (SID), Seattle, USA, (2004) 272275.Google Scholar
3. Lee, J. H., Nam, W. J., Shin, H. S., Han, M. K., IDW'05, Takamatsu, Japan, (2005) 667670.Google Scholar
4. Powell, M. J., Berkel, C. van, French, I. D., and Nicholls, D. H., Appl. Phys. Lett., 51 (1987) 1242.CrossRefGoogle Scholar
5. Karim, Karim S., Nathan, Arokia, Hack, Michael, and Milne, William I., IEEE Electron Device Lett., 25 (2004) 188.CrossRefGoogle Scholar
6. Powell, M. J., Appl. Phys. Lett., 43 (1983) 15.CrossRefGoogle Scholar
7. Libsch, F. R. and Kanicki, J., Appl. Phys. Lett., 62 (1993) 1286.CrossRefGoogle Scholar
8. Powell, M. J., Berkel, C. V., Franklin, A. R., Deane, S. C and Milne, W. I., The American Physical Society, Physical Review B, 45 (1992) 4160.CrossRefGoogle Scholar
9. Chiang, C.S., Kanicki, J., and Takechi, K., Jpn. J. Appl. Phys., 37 (1998) 4704.CrossRefGoogle Scholar
10. Ibaraki, N., Kigoshi, M., Fukuda, K. and Kobayashi, J., Journal of Non-Crystalline Solids, 115 (1989) 138.CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 5 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 9th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Bias Stress Stability of Asymmetric Source-Drain a-Si:H Thin Film Transistors
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Bias Stress Stability of Asymmetric Source-Drain a-Si:H Thin Film Transistors
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Bias Stress Stability of Asymmetric Source-Drain a-Si:H Thin Film Transistors
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *