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Barrier Effect of Retrograde Well Against Ion-Induced-Charge Carriers

Published online by Cambridge University Press:  22 February 2011

Hirokazu Sayama
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Takehisa Kishimoto
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Mikio Takai
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Hiroshi Kimura
Affiliation:
ULSI Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo 664, Japan
Yoshikazu Ohno
Affiliation:
ULSI Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo 664, Japan
Ken-Ichiro Sonoda
Affiliation:
ULSI Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo 664, Japan
Norihiko Kotani
Affiliation:
ULSI Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo 664, Japan
Shin-Ichi Satoh
Affiliation:
ULSI Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo 664, Japan
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Abstract

The charge collection efficiency of a diode with a retrograde well was estimated using focused ion beam irradiation at 400 keV and 2 MeV. The retrograde well was found to effectively suppress a collection of charge carriers created by energetic particles. The charge collection efficiency of the diode with the retrograde well was ~ 25 % lower than that with the conventional well when 400 keV ~ 2 MeV protons were irradiated normal to diodes. This result was in good agreement with device simulation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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