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Atomic Structure of Non-Basal-Plane SiC Surfaces: Hydrogen Etching and Surface Phase Transformations

Published online by Cambridge University Press:  01 February 2011

Serguei Soubatch ,
Wai Y. Lee ,
Martin Hetzel ,
Chariya Virojanadara ,
Camilla Coletti ,
Stephen E. Saddow  and
Ulrich Starke
Wai Y. Lee
Affiliation:
kenjiez@hotmail.com, Max-Planck-Institut fuer Festkoerperforschung,, Heisenbergstr. 1, Stuttgart, N/A, 70569, Germany
Martin Hetzel
Affiliation:
m.hetzel@fkf.mpg.de, Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, Stuttgart, 70569, Germany
Chariya Virojanadara
Affiliation:
c.virojanadara@fkf.mpg.de, Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, Stuttgart, 70569, Germany
Camilla Coletti
Affiliation:
camilla@eng.usf.edu, University of South Florida, Dept. of Electrical Engineering, 4202 East Fowler Avenue, ENB118, Tampa, Florida, 33620-5350, United States
Stephen E. Saddow
Affiliation:
saddow@eng.usf.edu, University of South Florida, Dept. of Electrical Engineering, 4202 East Fowler Avenue, ENB118, Tampa, Florida, 33620-5350, United States
Ulrich Starke
Affiliation:
u.starke@fkf.mpg.de, Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, Stuttgart, N/A, 70569, Germany
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Abstract

A-plane (11-20) and diagonal cut (1-102) and (-110-2) surfaces of 4H-SiC have been investigated using atomic force microscopy (AFM), low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), X-ray photoemission spectroscopy (XPS) and scanning tunneling microscopy (STM). After hydrogen etching the surfaces show large, flat terraces. On SiC(11-20) steps down to single atomic heights are observed. On the diagonal cut surfaces steps run parallel and perpendicular to the [-1101] direction, yet drastically different morphologies for the two isomorphic orientations are found. All surfaces immediately display a sharp LEED pattern. For SiC(1-102) and SiC(-110-2) the additional significant presence of oxygen in the AES spectra indicates the development of an ordered oxide. All three surfaces show an oxygen free, well ordered surface after Si deposition and annealing. A transformation between different surface phases is observed upon annealing.

Keywords

surface chemistrycrystallographic structurescanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B07-01
Copyright
Copyright © Materials Research Society 2006

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